Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1990-02, Vol.29 (2A), p.L205 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_issue | 2A |
| container_start_page | L205 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 29 |
| creator | Amano, Hiroshi Asahi, Tsunemori Akasaki, Isamu |
| description | We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode. |
| doi_str_mv | 10.1143/JJAP.29.L205 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1990-02, Vol.29 (2A), p.L205 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_29_L205 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer |
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