Fabrication of first-order gratings for GaAs/AlGaAs LD's by EB lithography

High-precision first-order gratings, 110 nm pitch, for GaAs/AlGaAs LD's were successfully fabricated using EB lithography. The field stitching error of EB lithography caused by height difference between reference marks for calibration and the samples, was reduced to 5 nm by controlling the EB d...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1990-07, Vol.29 (7), p.L1217-L1220
Hauptverfasser:	SUEHIRO, M, HIRATA, T, MAEDA, M, HOSOMATSU, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Optical workshop techniques Optics Physics
Online-Zugang:	Volltext
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