The application of the correlation method for the EB (electron beam) exposure system
In EB direct wafer writing, we have applied the correlation method to detecting the position of the registration mark and we also applied it to detecting the width of the mark, the size of the beam and the degree of focusing for the calibration of the EB exposure system. This method is less influenc...
Gespeichert in:
Veröffentlicht in: | Japanese Journal of Applied Physics 1990-11, Vol.29 (11), p.2596-2599 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 2599 |
---|---|
container_issue | 11 |
container_start_page | 2596 |
container_title | Japanese Journal of Applied Physics |
container_volume | 29 |
creator | KAWAMURA, I OKINO, T HANDA, N SATO, H GOTO, N |
description | In EB direct wafer writing, we have applied the correlation method to detecting the position of the registration mark and we also applied it to detecting the width of the mark, the size of the beam and the degree of focusing for the calibration of the EB exposure system. This method is less influenced by random noises and has wide capability for the signal forms. We have also developed a detection hardware unit and applied it to our variable shaped EB exposure system JBX-8600DV with satisfactory results. The reliability of detection of the mark position is 0.05 µmpp by single scanning; that of the beam size is 0.02 µmpp. We can adjust the focus to within ±3 µm. |
doi_str_mv | 10.1143/jjap.29.2596 |
format | Article |
fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_29_2596</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5421768</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-e0aadd1008c5fa3f0e993f58d9cbef4e6fecf9e770b746e8033ac864820c33573</originalsourceid><addsrcrecordid>eNo9UMtKw0AUHUTBWt35AbNwoWDqvJNZ1lIfpaCLug63kzs0JemEmQj275tacXU4z8Uh5JazCedKPm230E2EnQhtzRkZcanyTDGjz8mIMcEzZYW4JFcpbQdqtOIjslptkELXNbWDvg47GjztB8mFGLE5SS32m1BRH-KvNX-m99ig6-PgrRHaB4o_XUjfEWnapx7ba3LhoUl484dj8vUyX83esuXH6_tsusyc1LbPkAFUFWescNqD9AytlV4XlXVr9AqNR-ct5jlb58pgwaQEVxhVCOak1Lkck8fTroshpYi-7GLdQtyXnJXHR8rFYvpZClseHxnid6d4B8lB4yPsXJ3-O1oJnptCHgC2M2GS</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The application of the correlation method for the EB (electron beam) exposure system</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>KAWAMURA, I ; OKINO, T ; HANDA, N ; SATO, H ; GOTO, N</creator><creatorcontrib>KAWAMURA, I ; OKINO, T ; HANDA, N ; SATO, H ; GOTO, N</creatorcontrib><description>In EB direct wafer writing, we have applied the correlation method to detecting the position of the registration mark and we also applied it to detecting the width of the mark, the size of the beam and the degree of focusing for the calibration of the EB exposure system. This method is less influenced by random noises and has wide capability for the signal forms. We have also developed a detection hardware unit and applied it to our variable shaped EB exposure system JBX-8600DV with satisfactory results. The reliability of detection of the mark position is 0.05 µmpp by single scanning; that of the beam size is 0.02 µmpp. We can adjust the focus to within ±3 µm.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.29.2596</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron and ion emission by liquids and solids; impact phenomena ; Exact sciences and technology ; Physics</subject><ispartof>Japanese Journal of Applied Physics, 1990-11, Vol.29 (11), p.2596-2599</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-e0aadd1008c5fa3f0e993f58d9cbef4e6fecf9e770b746e8033ac864820c33573</citedby><cites>FETCH-LOGICAL-c359t-e0aadd1008c5fa3f0e993f58d9cbef4e6fecf9e770b746e8033ac864820c33573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5421768$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KAWAMURA, I</creatorcontrib><creatorcontrib>OKINO, T</creatorcontrib><creatorcontrib>HANDA, N</creatorcontrib><creatorcontrib>SATO, H</creatorcontrib><creatorcontrib>GOTO, N</creatorcontrib><title>The application of the correlation method for the EB (electron beam) exposure system</title><title>Japanese Journal of Applied Physics</title><description>In EB direct wafer writing, we have applied the correlation method to detecting the position of the registration mark and we also applied it to detecting the width of the mark, the size of the beam and the degree of focusing for the calibration of the EB exposure system. This method is less influenced by random noises and has wide capability for the signal forms. We have also developed a detection hardware unit and applied it to our variable shaped EB exposure system JBX-8600DV with satisfactory results. The reliability of detection of the mark position is 0.05 µmpp by single scanning; that of the beam size is 0.02 µmpp. We can adjust the focus to within ±3 µm.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNo9UMtKw0AUHUTBWt35AbNwoWDqvJNZ1lIfpaCLug63kzs0JemEmQj275tacXU4z8Uh5JazCedKPm230E2EnQhtzRkZcanyTDGjz8mIMcEzZYW4JFcpbQdqtOIjslptkELXNbWDvg47GjztB8mFGLE5SS32m1BRH-KvNX-m99ig6-PgrRHaB4o_XUjfEWnapx7ba3LhoUl484dj8vUyX83esuXH6_tsusyc1LbPkAFUFWescNqD9AytlV4XlXVr9AqNR-ct5jlb58pgwaQEVxhVCOak1Lkck8fTroshpYi-7GLdQtyXnJXHR8rFYvpZClseHxnid6d4B8lB4yPsXJ3-O1oJnptCHgC2M2GS</recordid><startdate>19901101</startdate><enddate>19901101</enddate><creator>KAWAMURA, I</creator><creator>OKINO, T</creator><creator>HANDA, N</creator><creator>SATO, H</creator><creator>GOTO, N</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19901101</creationdate><title>The application of the correlation method for the EB (electron beam) exposure system</title><author>KAWAMURA, I ; OKINO, T ; HANDA, N ; SATO, H ; GOTO, N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-e0aadd1008c5fa3f0e993f58d9cbef4e6fecf9e770b746e8033ac864820c33573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KAWAMURA, I</creatorcontrib><creatorcontrib>OKINO, T</creatorcontrib><creatorcontrib>HANDA, N</creatorcontrib><creatorcontrib>SATO, H</creatorcontrib><creatorcontrib>GOTO, N</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAWAMURA, I</au><au>OKINO, T</au><au>HANDA, N</au><au>SATO, H</au><au>GOTO, N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The application of the correlation method for the EB (electron beam) exposure system</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1990-11-01</date><risdate>1990</risdate><volume>29</volume><issue>11</issue><spage>2596</spage><epage>2599</epage><pages>2596-2599</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>In EB direct wafer writing, we have applied the correlation method to detecting the position of the registration mark and we also applied it to detecting the width of the mark, the size of the beam and the degree of focusing for the calibration of the EB exposure system. This method is less influenced by random noises and has wide capability for the signal forms. We have also developed a detection hardware unit and applied it to our variable shaped EB exposure system JBX-8600DV with satisfactory results. The reliability of detection of the mark position is 0.05 µmpp by single scanning; that of the beam size is 0.02 µmpp. We can adjust the focus to within ±3 µm.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.29.2596</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-4922 |
ispartof | Japanese Journal of Applied Physics, 1990-11, Vol.29 (11), p.2596-2599 |
issn | 0021-4922 1347-4065 |
language | eng |
recordid | cdi_crossref_primary_10_1143_JJAP_29_2596 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Physics |
title | The application of the correlation method for the EB (electron beam) exposure system |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T04%3A44%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20application%20of%20the%20correlation%20method%20for%20the%20EB%20(electron%20beam)%20exposure%20system&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=KAWAMURA,%20I&rft.date=1990-11-01&rft.volume=29&rft.issue=11&rft.spage=2596&rft.epage=2599&rft.pages=2596-2599&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.29.2596&rft_dat=%3Cpascalfrancis_cross%3E5421768%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |