The application of the correlation method for the EB (electron beam) exposure system

In EB direct wafer writing, we have applied the correlation method to detecting the position of the registration mark and we also applied it to detecting the width of the mark, the size of the beam and the degree of focusing for the calibration of the EB exposure system. This method is less influenc...

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Veröffentlicht in:Japanese Journal of Applied Physics 1990-11, Vol.29 (11), p.2596-2599
Hauptverfasser: KAWAMURA, I, OKINO, T, HANDA, N, SATO, H, GOTO, N
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container_end_page 2599
container_issue 11
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container_title Japanese Journal of Applied Physics
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creator KAWAMURA, I
OKINO, T
HANDA, N
SATO, H
GOTO, N
description In EB direct wafer writing, we have applied the correlation method to detecting the position of the registration mark and we also applied it to detecting the width of the mark, the size of the beam and the degree of focusing for the calibration of the EB exposure system. This method is less influenced by random noises and has wide capability for the signal forms. We have also developed a detection hardware unit and applied it to our variable shaped EB exposure system JBX-8600DV with satisfactory results. The reliability of detection of the mark position is 0.05 µmpp by single scanning; that of the beam size is 0.02 µmpp. We can adjust the focus to within ±3 µm.
doi_str_mv 10.1143/jjap.29.2596
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Physics
title The application of the correlation method for the EB (electron beam) exposure system
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