Minimization of X-ray mask distortion by two-dimensional finite element method simulation
X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square window...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1990-10, Vol.29 (10), p.2203-2206 |
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container_title | Japanese Journal of Applied Physics |
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creator | KISHIMOTO, A KUNIYOSHI, S SAITO, N SOGA, T MOCHIJI, K KIMURA, T |
description | X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square windows can be minimized by reducing the pattern length. In addition, it is found that the maximum distortion is virtually the same regardless of the number of LSI chips within the square window mask. |
doi_str_mv | 10.1143/jjap.29.2203 |
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fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_29_2203</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4304108</sourcerecordid><originalsourceid>FETCH-LOGICAL-c272t-9fd4aa897260879f509f69750205e42539f6db3f6d99e986dc705d9b259d42903</originalsourceid><addsrcrecordid>eNo9UMtOAyEUJUYTa3XnB7BwKRUuMDMsm0arTY0uNNHVhA4QqfNoAGPq10tb4-benOfiIHTJ6IQxwW_Wa72ZgJoAUH6ERoyLkghayGM0ohQYEQrgFJ3FuM6wkIKN0Puj733nf3TyQ48Hh99I0Fvc6fiJjY9pCHthtcXpeyDGd7aPmdAtdjmYLLatzVzCnU0fg8HRd1_tvuwcnTjdRnvx98fo9e72ZXZPlk_zh9l0SRooIRHljNC6UiUUtCqVk1S5QpWSApVWgOQZmhXPRymrqsI0JZVGrUAqI0BRPkbXh94mDDEG6-pN8J0O25rRejdLvVhMn2tQ9W6WbL862Dc6Nrp1QfeNj_8ZwalgtOK_KStjAQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Minimization of X-ray mask distortion by two-dimensional finite element method simulation</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>KISHIMOTO, A ; KUNIYOSHI, S ; SAITO, N ; SOGA, T ; MOCHIJI, K ; KIMURA, T</creator><creatorcontrib>KISHIMOTO, A ; KUNIYOSHI, S ; SAITO, N ; SOGA, T ; MOCHIJI, K ; KIMURA, T</creatorcontrib><description>X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square windows can be minimized by reducing the pattern length. In addition, it is found that the maximum distortion is virtually the same regardless of the number of LSI chips within the square window mask.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.29.2203</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1990-10, Vol.29 (10), p.2203-2206</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c272t-9fd4aa897260879f509f69750205e42539f6db3f6d99e986dc705d9b259d42903</citedby><cites>FETCH-LOGICAL-c272t-9fd4aa897260879f509f69750205e42539f6db3f6d99e986dc705d9b259d42903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4304108$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KISHIMOTO, A</creatorcontrib><creatorcontrib>KUNIYOSHI, S</creatorcontrib><creatorcontrib>SAITO, N</creatorcontrib><creatorcontrib>SOGA, T</creatorcontrib><creatorcontrib>MOCHIJI, K</creatorcontrib><creatorcontrib>KIMURA, T</creatorcontrib><title>Minimization of X-ray mask distortion by two-dimensional finite element method simulation</title><title>Japanese Journal of Applied Physics</title><description>X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square windows can be minimized by reducing the pattern length. In addition, it is found that the maximum distortion is virtually the same regardless of the number of LSI chips within the square window mask.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNo9UMtOAyEUJUYTa3XnB7BwKRUuMDMsm0arTY0uNNHVhA4QqfNoAGPq10tb4-benOfiIHTJ6IQxwW_Wa72ZgJoAUH6ERoyLkghayGM0ohQYEQrgFJ3FuM6wkIKN0Puj733nf3TyQ48Hh99I0Fvc6fiJjY9pCHthtcXpeyDGd7aPmdAtdjmYLLatzVzCnU0fg8HRd1_tvuwcnTjdRnvx98fo9e72ZXZPlk_zh9l0SRooIRHljNC6UiUUtCqVk1S5QpWSApVWgOQZmhXPRymrqsI0JZVGrUAqI0BRPkbXh94mDDEG6-pN8J0O25rRejdLvVhMn2tQ9W6WbL862Dc6Nrp1QfeNj_8ZwalgtOK_KStjAQ</recordid><startdate>19901001</startdate><enddate>19901001</enddate><creator>KISHIMOTO, A</creator><creator>KUNIYOSHI, S</creator><creator>SAITO, N</creator><creator>SOGA, T</creator><creator>MOCHIJI, K</creator><creator>KIMURA, T</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19901001</creationdate><title>Minimization of X-ray mask distortion by two-dimensional finite element method simulation</title><author>KISHIMOTO, A ; KUNIYOSHI, S ; SAITO, N ; SOGA, T ; MOCHIJI, K ; KIMURA, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c272t-9fd4aa897260879f509f69750205e42539f6db3f6d99e986dc705d9b259d42903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KISHIMOTO, A</creatorcontrib><creatorcontrib>KUNIYOSHI, S</creatorcontrib><creatorcontrib>SAITO, N</creatorcontrib><creatorcontrib>SOGA, T</creatorcontrib><creatorcontrib>MOCHIJI, K</creatorcontrib><creatorcontrib>KIMURA, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KISHIMOTO, A</au><au>KUNIYOSHI, S</au><au>SAITO, N</au><au>SOGA, T</au><au>MOCHIJI, K</au><au>KIMURA, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Minimization of X-ray mask distortion by two-dimensional finite element method simulation</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1990-10-01</date><risdate>1990</risdate><volume>29</volume><issue>10</issue><spage>2203</spage><epage>2206</epage><pages>2203-2206</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>X-ray mask distortion caused by absorber stress is quantitatively analyzed by using two-dimensional simulation. Simulated results successfully predict the mask pattern distortion in practical mask structures. A square mask window is better than a circular one because the distortion for square windows can be minimized by reducing the pattern length. In addition, it is found that the maximum distortion is virtually the same regardless of the number of LSI chips within the square window mask.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.29.2203</doi><tpages>4</tpages></addata></record> |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Minimization of X-ray mask distortion by two-dimensional finite element method simulation |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T06%3A33%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Minimization%20of%20X-ray%20mask%20distortion%20by%20two-dimensional%20finite%20element%20method%20simulation&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=KISHIMOTO,%20A&rft.date=1990-10-01&rft.volume=29&rft.issue=10&rft.spage=2203&rft.epage=2206&rft.pages=2203-2206&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.29.2203&rft_dat=%3Cpascalfrancis_cross%3E4304108%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |