Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist
Negative photoresist, LMR-UV, has been developed for i-line lithography. It resolves isolated 0.3 µm space and 0.35 µm hole patterns of 1.0 µm thickness by using a 0.42-numerical-aperture i-line reduction projection aligner. LMR-UV gives overhung profiles because of its large absorption coefficient...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1989-10, Vol.28 (10R), p.2053 |
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| container_issue | 10R |
| container_start_page | 2053 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 28 |
| creator | Jinbo, Hideyuki Yamashita, Yoshio Endo, Akihiro Nishibu, Satoshi Umehara, Hiroshi Asano, Takateru |
| description | Negative photoresist, LMR-UV, has been developed for i-line lithography. It resolves isolated 0.3 µm space and 0.35 µm hole patterns of 1.0 µm thickness by using a 0.42-numerical-aperture i-line reduction projection aligner. LMR-UV gives overhung profiles because of its large absorption coefficient of 3.8 µm
-1
at the i-line. New phase-shifting mask patterns which are adapted to isolated space and hole patterns for negative resist have been developed. By use of this mask, LMR-UV clearly resolves 0.25 µm space and 0.3 µm hole patterns by using the i-line aligner. This phase-shifting mask improves both resolution and focus margin. |
| doi_str_mv | 10.1143/JJAP.28.2053 |
| format | Article |
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-1
at the i-line. New phase-shifting mask patterns which are adapted to isolated space and hole patterns for negative resist have been developed. By use of this mask, LMR-UV clearly resolves 0.25 µm space and 0.3 µm hole patterns by using the i-line aligner. This phase-shifting mask improves both resolution and focus margin.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.28.2053</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1989-10, Vol.28 (10R), p.2053</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-ffa7701f9ca6bbadc0795c3878eba9dac4eedbeec371d433199c35914c07eb343</citedby><cites>FETCH-LOGICAL-c328t-ffa7701f9ca6bbadc0795c3878eba9dac4eedbeec371d433199c35914c07eb343</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Jinbo, Hideyuki</creatorcontrib><creatorcontrib>Yamashita, Yoshio</creatorcontrib><creatorcontrib>Endo, Akihiro</creatorcontrib><creatorcontrib>Nishibu, Satoshi</creatorcontrib><creatorcontrib>Umehara, Hiroshi</creatorcontrib><creatorcontrib>Asano, Takateru</creatorcontrib><title>Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist</title><title>Japanese Journal of Applied Physics</title><description>Negative photoresist, LMR-UV, has been developed for i-line lithography. It resolves isolated 0.3 µm space and 0.35 µm hole patterns of 1.0 µm thickness by using a 0.42-numerical-aperture i-line reduction projection aligner. LMR-UV gives overhung profiles because of its large absorption coefficient of 3.8 µm
-1
at the i-line. New phase-shifting mask patterns which are adapted to isolated space and hole patterns for negative resist have been developed. By use of this mask, LMR-UV clearly resolves 0.25 µm space and 0.3 µm hole patterns by using the i-line aligner. This phase-shifting mask improves both resolution and focus margin.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNotj9FKwzAYhYMoOKd3PkAewNQkf9o03o2hm6NDmdbbkKSJi8x1NPWib2-LXh0OHD7Oh9AtoxljAu43m8VrxsuM0xzO0IyBkETQIj9HM0o5I0JxfomuUvoaa5ELNkMPbz-WrM0hkG10XXvEkVTx6HEV-3372ZnTfsB2wHXyuA242u5I_YF3PsXUX6OLYA7J3_znHNVPj-_LNaleVs_LRUUc8LInIRgpKQvKmcJa0zgqVe6glKW3RjXGCe8b670DyRoBwJRykCsmxqG3IGCO7v6447-UOh_0qYvfphs0o3ry1pO35qWevOEX7mVKBQ</recordid><startdate>19891001</startdate><enddate>19891001</enddate><creator>Jinbo, Hideyuki</creator><creator>Yamashita, Yoshio</creator><creator>Endo, Akihiro</creator><creator>Nishibu, Satoshi</creator><creator>Umehara, Hiroshi</creator><creator>Asano, Takateru</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19891001</creationdate><title>Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist</title><author>Jinbo, Hideyuki ; Yamashita, Yoshio ; Endo, Akihiro ; Nishibu, Satoshi ; Umehara, Hiroshi ; Asano, Takateru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-ffa7701f9ca6bbadc0795c3878eba9dac4eedbeec371d433199c35914c07eb343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jinbo, Hideyuki</creatorcontrib><creatorcontrib>Yamashita, Yoshio</creatorcontrib><creatorcontrib>Endo, Akihiro</creatorcontrib><creatorcontrib>Nishibu, Satoshi</creatorcontrib><creatorcontrib>Umehara, Hiroshi</creatorcontrib><creatorcontrib>Asano, Takateru</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jinbo, Hideyuki</au><au>Yamashita, Yoshio</au><au>Endo, Akihiro</au><au>Nishibu, Satoshi</au><au>Umehara, Hiroshi</au><au>Asano, Takateru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1989-10-01</date><risdate>1989</risdate><volume>28</volume><issue>10R</issue><spage>2053</spage><pages>2053-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Negative photoresist, LMR-UV, has been developed for i-line lithography. It resolves isolated 0.3 µm space and 0.35 µm hole patterns of 1.0 µm thickness by using a 0.42-numerical-aperture i-line reduction projection aligner. LMR-UV gives overhung profiles because of its large absorption coefficient of 3.8 µm
-1
at the i-line. New phase-shifting mask patterns which are adapted to isolated space and hole patterns for negative resist have been developed. By use of this mask, LMR-UV clearly resolves 0.25 µm space and 0.3 µm hole patterns by using the i-line aligner. This phase-shifting mask improves both resolution and focus margin.</abstract><doi>10.1143/JJAP.28.2053</doi></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1989-10, Vol.28 (10R), p.2053 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_28_2053 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist |
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