Epitaxial NbN/MgO/Si(GaAs,InP) tunneling MIS Schottky diode fabricated by interrupted-sputtering method

Epitaxial NbN/MgO/Si(GaAs,InP) tunneling MIS Schottky diode fabricated by interrupted-sputtering method

Epitaxial NbN/MgO/Si(GaAs or InP) MIS structures were prepared by the sputtering technique. Introduction of the interrupted-sputtering method facilitated the growth of epitaxial NbN/MgO/Si heterostructures for almost one monolayer MgO layer. GaAs and InP substrates, however, never fostered epitaxial...

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Veröffentlicht in:Japanese Journal of Applied Physics 1987, Vol.26 (1), p.L50-L52
Hauptverfasser: KOBAYASHI, T, TONOUCHI, M, SAKAGUCHI, Y, YAMASHITA, T
Format: Artikel
Sprache:eng
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Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_issue 1
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container_title Japanese Journal of Applied Physics
container_volume 26
creator KOBAYASHI, T
TONOUCHI, M
SAKAGUCHI, Y
YAMASHITA, T
description Epitaxial NbN/MgO/Si(GaAs or InP) MIS structures were prepared by the sputtering technique. Introduction of the interrupted-sputtering method facilitated the growth of epitaxial NbN/MgO/Si heterostructures for almost one monolayer MgO layer. GaAs and InP substrates, however, never fostered epitaxial overgrowth of NbN until the MgO layer became thicker than 3 nm. Diodes fabricated from these wafers exhibited good tunneling MIS Schottky characteristics.
doi_str_mv 10.1143/jjap.26.l50
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Introduction of the interrupted-sputtering method facilitated the growth of epitaxial NbN/MgO/Si heterostructures for almost one monolayer MgO layer. GaAs and InP substrates, however, never fostered epitaxial overgrowth of NbN until the MgO layer became thicker than 3 nm. Diodes fabricated from these wafers exhibited good tunneling MIS Schottky characteristics.</description><subject>Applied sciences</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Epitaxial NbN/MgO/Si(GaAs,InP) tunneling MIS Schottky diode fabricated by interrupted-sputtering method
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