Reduction in threshold current density of quantum well lasers grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates

Reduction in threshold current density of quantum well lasers grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates

GaAs/AlGaAs graded-index, separate confinement heterostructure quantum-well lasers with an extremely low threshold current density ( J th ) were grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates. The J th of these lasers was reduced by 20 A/cm 2 compared with that of (100)-orient...

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Veröffentlicht in:Japanese Journal of Applied Physics 1987-04, Vol.26 (4), p.L302-L305
Hauptverfasser: HAYAKAWA, T, KONDO, M, SUYAMA, T, TAKAHASHI, K, YAMAMOTO, S, HIJIKATA, T
Format: Artikel
Sprache:eng
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Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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container_end_page L305
container_issue 4
container_start_page L302
container_title Japanese Journal of Applied Physics
container_volume 26
creator HAYAKAWA, T
KONDO, M
SUYAMA, T
TAKAHASHI, K
YAMAMOTO, S
HIJIKATA, T
description GaAs/AlGaAs graded-index, separate confinement heterostructure quantum-well lasers with an extremely low threshold current density ( J th ) were grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates. The J th of these lasers was reduced by 20 A/cm 2 compared with that of (100)-oriented devices, which results from the quantization along the direction. The minimum J th of 158 A/cm 2 was achieved for a 490 µm long device.
doi_str_mv 10.1143/jjap.26.l302
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
title Reduction in threshold current density of quantum well lasers grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates
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