Oxygen-doped Si epitaxial film (OXSEF)

Oxygen-doped Si epitaxial film (OXSEF)

We propose a new wide-gap material, an oxygen-doped Si epitaxial film (OXSEF), for applications to Si heterobipolar transistors (HBTs). OXSEF containing several tens of at.% of oxygen can be grown on a Si substrate by depositing Si in about 10 -6 Torr O 2 . OXSEF is literally almost a single crystal...

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Veröffentlicht in:Japanese Journal of Applied Physics 1987-11, Vol.26 (11), p.1830-1837
Hauptverfasser: TABE, M, TAKAHASHI, M, SAKAKIBARA, Y
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Sprache:eng
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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container_issue 11
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container_title Japanese Journal of Applied Physics
container_volume 26
creator TABE, M
TAKAHASHI, M
SAKAKIBARA, Y
description We propose a new wide-gap material, an oxygen-doped Si epitaxial film (OXSEF), for applications to Si heterobipolar transistors (HBTs). OXSEF containing several tens of at.% of oxygen can be grown on a Si substrate by depositing Si in about 10 -6 Torr O 2 . OXSEF is literally almost a single crystal with an identical crystalline structure to Si, although it includes {111} twins as defects caused by oxygen. Temperature and O 2 pressure dependences of oxygen concentration in OXSEF are dominated by oxygen adsorption on the Si surface. Oxygen atoms in OXSEF segregate to some extent toform incomplete oxides like SiO 1.5 , but complete phase separation as a mixture of Si and SiO 2 . regions does not occur, probably bcause of non-equilibrium conditions in MBE growth. Valence band discontinuity at the Si/OXSEF interface is deduced to be 0.26 eV based on photoelectrical measurements.
doi_str_mv 10.1143/jjap.26.1830
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Oxygen-doped Si epitaxial film (OXSEF)
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