Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate

In the growth of GaAs on Si, the effects of the offset angle of the substrate and its direction on the epitaxial layer were studied using spherical Si substrates. The growth was carried out by a low pressure MOCVD system. On the grown layer, milky lines were observed along the [010] and the [001] ax...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1986-09, Vol.25 (9A), p.L789
Hauptverfasser:	Ueda, Takashi, Nishi, Seiji, Kawarada, Yoshihiro, Akiyama, Masahiro, Kaminishi, Katsuzo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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