Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
In the growth of GaAs on Si, the effects of the offset angle of the substrate and its direction on the epitaxial layer were studied using spherical Si substrates. The growth was carried out by a low pressure MOCVD system. On the grown layer, milky lines were observed along the [010] and the [001] ax...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1986-09, Vol.25 (9A), p.L789 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 9A |
| container_start_page | L789 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 25 |
| creator | Ueda, Takashi Nishi, Seiji Kawarada, Yoshihiro Akiyama, Masahiro Kaminishi, Katsuzo |
| description | In the growth of GaAs on Si, the effects of the offset angle of the substrate and its direction on the epitaxial layer were studied using spherical Si substrates. The growth was carried out by a low pressure MOCVD system. On the grown layer, milky lines were observed along the [010] and the [001] axis of the substrate. Except for the narrow regions along these milky lines, the grown layer showed a mirror-like surface with a single domain structure. The surface morphology and the etch pit density in the single domain GaAs layer were strongly affected by the offset direction as well as the offset angle of the substrate. |
| doi_str_mv | 10.1143/JJAP.25.L789 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_25_L789</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_25_L789</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-120d64bad617c1883308cc5944cecdfbbc63e1cc7eb34de7ac9c747f9e7105bb3</originalsourceid><addsrcrecordid>eNpFkF1LwzAUhoMoWKd3_oD8AFvz2bSXZczpLEyYXofk9MRN5ipJRPz3WhW8enk_zrl4CLnkrOJcyevVqnuohK5607RHpOBSmVKxWh-TgjHBS9UKcUrOUnr5trVWvCD3ixAQcqJjoHmLdPPuU44uI12HkDDT7vC8RzoeftplHD_ydtouXZemdLP7PzknJ8HtE1786Yw83Swe57dlv17ezbu-BCmaXHLBhlp5N9TcAG8aKVkDoFulAGEI3kMtkQMY9FINaBy0YJQJLRrOtPdyRq5-_0IcU4oY7Fvcvbr4aTmzEwg7gbBC2wmE_AIzjlDC</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate</title><source>HEAL-Link subscriptions: Institute of Physics (IOP) Journals</source><source>Institute of Physics Journals</source><creator>Ueda, Takashi ; Nishi, Seiji ; Kawarada, Yoshihiro ; Akiyama, Masahiro ; Kaminishi, Katsuzo</creator><creatorcontrib>Ueda, Takashi ; Nishi, Seiji ; Kawarada, Yoshihiro ; Akiyama, Masahiro ; Kaminishi, Katsuzo</creatorcontrib><description>In the growth of GaAs on Si, the effects of the offset angle of the substrate and its direction on the epitaxial layer were studied using spherical Si substrates. The growth was carried out by a low pressure MOCVD system. On the grown layer, milky lines were observed along the [010] and the [001] axis of the substrate. Except for the narrow regions along these milky lines, the grown layer showed a mirror-like surface with a single domain structure. The surface morphology and the etch pit density in the single domain GaAs layer were strongly affected by the offset direction as well as the offset angle of the substrate.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.25.L789</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1986-09, Vol.25 (9A), p.L789</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-120d64bad617c1883308cc5944cecdfbbc63e1cc7eb34de7ac9c747f9e7105bb3</citedby><cites>FETCH-LOGICAL-c328t-120d64bad617c1883308cc5944cecdfbbc63e1cc7eb34de7ac9c747f9e7105bb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Ueda, Takashi</creatorcontrib><creatorcontrib>Nishi, Seiji</creatorcontrib><creatorcontrib>Kawarada, Yoshihiro</creatorcontrib><creatorcontrib>Akiyama, Masahiro</creatorcontrib><creatorcontrib>Kaminishi, Katsuzo</creatorcontrib><title>Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate</title><title>Japanese Journal of Applied Physics</title><description>In the growth of GaAs on Si, the effects of the offset angle of the substrate and its direction on the epitaxial layer were studied using spherical Si substrates. The growth was carried out by a low pressure MOCVD system. On the grown layer, milky lines were observed along the [010] and the [001] axis of the substrate. Except for the narrow regions along these milky lines, the grown layer showed a mirror-like surface with a single domain structure. The surface morphology and the etch pit density in the single domain GaAs layer were strongly affected by the offset direction as well as the offset angle of the substrate.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNpFkF1LwzAUhoMoWKd3_oD8AFvz2bSXZczpLEyYXofk9MRN5ipJRPz3WhW8enk_zrl4CLnkrOJcyevVqnuohK5607RHpOBSmVKxWh-TgjHBS9UKcUrOUnr5trVWvCD3ixAQcqJjoHmLdPPuU44uI12HkDDT7vC8RzoeftplHD_ydtouXZemdLP7PzknJ8HtE1786Yw83Swe57dlv17ezbu-BCmaXHLBhlp5N9TcAG8aKVkDoFulAGEI3kMtkQMY9FINaBy0YJQJLRrOtPdyRq5-_0IcU4oY7Fvcvbr4aTmzEwg7gbBC2wmE_AIzjlDC</recordid><startdate>19860901</startdate><enddate>19860901</enddate><creator>Ueda, Takashi</creator><creator>Nishi, Seiji</creator><creator>Kawarada, Yoshihiro</creator><creator>Akiyama, Masahiro</creator><creator>Kaminishi, Katsuzo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19860901</creationdate><title>Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate</title><author>Ueda, Takashi ; Nishi, Seiji ; Kawarada, Yoshihiro ; Akiyama, Masahiro ; Kaminishi, Katsuzo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-120d64bad617c1883308cc5944cecdfbbc63e1cc7eb34de7ac9c747f9e7105bb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ueda, Takashi</creatorcontrib><creatorcontrib>Nishi, Seiji</creatorcontrib><creatorcontrib>Kawarada, Yoshihiro</creatorcontrib><creatorcontrib>Akiyama, Masahiro</creatorcontrib><creatorcontrib>Kaminishi, Katsuzo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ueda, Takashi</au><au>Nishi, Seiji</au><au>Kawarada, Yoshihiro</au><au>Akiyama, Masahiro</au><au>Kaminishi, Katsuzo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1986-09-01</date><risdate>1986</risdate><volume>25</volume><issue>9A</issue><spage>L789</spage><pages>L789-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>In the growth of GaAs on Si, the effects of the offset angle of the substrate and its direction on the epitaxial layer were studied using spherical Si substrates. The growth was carried out by a low pressure MOCVD system. On the grown layer, milky lines were observed along the [010] and the [001] axis of the substrate. Except for the narrow regions along these milky lines, the grown layer showed a mirror-like surface with a single domain structure. The surface morphology and the etch pit density in the single domain GaAs layer were strongly affected by the offset direction as well as the offset angle of the substrate.</abstract><doi>10.1143/JJAP.25.L789</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1986-09, Vol.25 (9A), p.L789 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_25_L789 |
| source | HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals |
| title | Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T14%3A32%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20the%20Substrate%20Offset%20Angle%20on%20the%20Growth%20of%20GaAs%20on%20Si%20Substrate&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Ueda,%20Takashi&rft.date=1986-09-01&rft.volume=25&rft.issue=9A&rft.spage=L789&rft.pages=L789-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.25.L789&rft_dat=%3Ccrossref%3E10_1143_JJAP_25_L789%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |