Water-Soluble Barrier Material for Three-Layer Resist Systems
Water-soluble films for use as intermediate barrier material in three-layer resist systems are proposed. A water-soluble film containing MoO 3 , which is formed at a high rate, is found to be suitable for use as the bottom layer etch mask because of its high resistance to O 2 RIE. By dipping the sub...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1985, Vol.24 (10), p.L789-L791, Article 789 |
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| Sprache: | eng |
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| container_end_page | L791 |
|---|---|
| container_issue | 10 |
| container_start_page | L789 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 24 |
| creator | NAMATSU, H SHIBATA, T |
| description | Water-soluble films for use as intermediate barrier material in three-layer resist systems are proposed. A water-soluble film containing MoO
3
, which is formed at a high rate, is found to be suitable for use as the bottom layer etch mask because of its high resistance to O
2
RIE. By dipping the substrate in water after etching the bottom layer, the water-soluble film can be easily removed, without damaging the bottom layer or the substrate. The water-soluble film is successfully applied to a three-layer resist system for both e-beam and optical lithography. |
| doi_str_mv | 10.1143/JJAP.24.L789 |
| format | Article |
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3
, which is formed at a high rate, is found to be suitable for use as the bottom layer etch mask because of its high resistance to O
2
RIE. By dipping the substrate in water after etching the bottom layer, the water-soluble film can be easily removed, without damaging the bottom layer or the substrate. The water-soluble film is successfully applied to a three-layer resist system for both e-beam and optical lithography.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.24.L789</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology</subject><ispartof>Japanese Journal of Applied Physics, 1985, Vol.24 (10), p.L789-L791, Article 789</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c206t-f0d957da632ce09d93916535cb0633db1e7e7d18da9fcbc3a4bfbfaadad513963</citedby><cites>FETCH-LOGICAL-c206t-f0d957da632ce09d93916535cb0633db1e7e7d18da9fcbc3a4bfbfaadad513963</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,4010,27904,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8745905$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>NAMATSU, H</creatorcontrib><creatorcontrib>SHIBATA, T</creatorcontrib><title>Water-Soluble Barrier Material for Three-Layer Resist Systems</title><title>Japanese Journal of Applied Physics</title><description>Water-soluble films for use as intermediate barrier material in three-layer resist systems are proposed. A water-soluble film containing MoO
3
, which is formed at a high rate, is found to be suitable for use as the bottom layer etch mask because of its high resistance to O
2
RIE. By dipping the substrate in water after etching the bottom layer, the water-soluble film can be easily removed, without damaging the bottom layer or the substrate. The water-soluble film is successfully applied to a three-layer resist system for both e-beam and optical lithography.</description><subject>Applied sciences</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNptj8tKA0EQRRtRMEZ3fsAsXNqx35NeuIjBVxhRTMTlUNMPbJlkQne7yN87Q8SFuCqq7qkDF6FzSiaUCn61WMxeJkxMqnKqD9CIclFiQZQ8RCNCGMVCM3aMTlL67FclBR2h63fILuJl1341rStuIMbgYvE0XAO0he9isfqIzuEKdn3w6lJIuVjuUnbrdIqOPLTJnf3MMXq7u13NH3D1fP84n1XYMKIy9sRqWVpQnBlHtNVcUyW5NA1RnNuGutKVlk4taG8aw0E0vvEAFqykXCs-Rpd7r4ldStH5ehvDGuKupqQeqtdD9ZqJeqje4xd7fAvJQOsjbExIvz_TUkhNZI-xP1YTMuTQbXKE0P7v_gbpCWom</recordid><startdate>1985</startdate><enddate>1985</enddate><creator>NAMATSU, H</creator><creator>SHIBATA, T</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1985</creationdate><title>Water-Soluble Barrier Material for Three-Layer Resist Systems</title><author>NAMATSU, H ; SHIBATA, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c206t-f0d957da632ce09d93916535cb0633db1e7e7d18da9fcbc3a4bfbfaadad513963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NAMATSU, H</creatorcontrib><creatorcontrib>SHIBATA, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NAMATSU, H</au><au>SHIBATA, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Water-Soluble Barrier Material for Three-Layer Resist Systems</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1985</date><risdate>1985</risdate><volume>24</volume><issue>10</issue><spage>L789</spage><epage>L791</epage><pages>L789-L791</pages><artnum>789</artnum><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Water-soluble films for use as intermediate barrier material in three-layer resist systems are proposed. A water-soluble film containing MoO
3
, which is formed at a high rate, is found to be suitable for use as the bottom layer etch mask because of its high resistance to O
2
RIE. By dipping the substrate in water after etching the bottom layer, the water-soluble film can be easily removed, without damaging the bottom layer or the substrate. The water-soluble film is successfully applied to a three-layer resist system for both e-beam and optical lithography.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.24.L789</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1985, Vol.24 (10), p.L789-L791, Article 789 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_24_L789 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology |
| title | Water-Soluble Barrier Material for Three-Layer Resist Systems |
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