Optoelectrical properties of hydrogenated amorphous silicon-polycrystalline cadmium telluride heterojunctions

Optoelectrical properties of heterojunctions consisting of hydrogenated amorphous silicon (a-Si:H) and polycrystalline cadmium telluride (pc-CdTe) have been investigated in current-voltage characteristics and spectral photoresponses. It was found that the a-Si:H/pc-CdTe heterojunctions had depletion...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1985-01, Vol.24 (9), p.L717-L719
Hauptverfasser:	MIMURA, H, KAJIYAMA, S, NOGAMI, M, HATANAKA, Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Zusammenfassung:	Optoelectrical properties of heterojunctions consisting of hydrogenated amorphous silicon (a-Si:H) and polycrystalline cadmium telluride (pc-CdTe) have been investigated in current-voltage characteristics and spectral photoresponses. It was found that the a-Si:H/pc-CdTe heterojunctions had depletion layers on both sides of a-Si:H and pc-CdTe and provided a high and flat photosensitivity over the wavelength range from 400 to 850 nm. These results hold promise for application to a highly efficient solar cell and a photo-sensor.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.24.l717