High-speed low-power ring oscillator using inverted-structure modulation-doped GaAs/n-AlGaAs field-effect transistors

Modulation-doped GaAs/n-AlGaAs field-effect transistors with inverted structures, i.e. undoped GaAs on top of n-AlGas, have been successfully used in E/D-type DCFL ring oscillators. An inverted heterojunction structure grown by MBE showed a high electron mobility of about 20,000–92,000 cm 2 /(Vs) at...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 1985-08, Vol.24 (8), p.1061-1064
Hauptverfasser:	KINOSHITA, H, NISHI, S, AKIYAMA, M, KAMINISHI, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Oscillators, resonators, synthetizers
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!