Au-Ge ohmic contact to n-GaAs by IR lamp alloying
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1984-01, Vol.23 (3), p.379-380 |
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| Sprache: | eng |
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| container_end_page | 380 |
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| container_issue | 3 |
| container_start_page | 379 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 23 |
| creator | YASUAMI, S SAITO, Y HOJO, A |
| description | |
| doi_str_mv | 10.1143/jjap.23.379 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1984-01, Vol.23 (3), p.379-380 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_23_379 |
| source | Institute of Physics Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Au-Ge ohmic contact to n-GaAs by IR lamp alloying |
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