Heteroepitaxial growth and superstructure of Ge on Si(111)-7×7 and (100)-2×1 surfaces

The initial stage of the heteroepitaxy, and the superstructure of Ge on Si surfaces, have been investigated by LEED and AES. Germanium was evaporated on to a clean Si(111–7×7 surface and also on to an Si(100)–2×1 surface. The layer-by-layer growth of Ge films on the Si surfaces was confirmed from th...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1983-10, Vol.22 (10), p.1482-1488
Hauptverfasser:	SHOJI, K, HYODO, M, UEBA, H, TATSUYAMA, C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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