Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy II. Effect of Substrate Orientation
Emission efficiency and reproducibility of GaP red-emitting diodes are improved by removal of a deteriorated layer of a p -type substrate by dissolution in the epitaxy solution just before growth of an n layer. Employment of this procedure enables investigating the effect of substrate orientation. T...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1971-01, Vol.10 (1), p.109 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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