True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
We demonstrate true-blue (450--460 nm) nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE) on $c$-plane GaN substrates operating in continuous wave mode. The maximum optical power measured for these LDs is 80 mW, while the lifetime at the optical power of 10 mW i...
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| Veröffentlicht in: | Applied physics express 2012-11, Vol.5 (11), p.112103-112103-3 |
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| creator | Skierbiszewski, Czeslaw Siekacz, Marcin Turski, Henryk Muziol, Grzegorz Sawicka, Marta Wolny, Pawel Cywiński, Grzegorz Marona, Lucja Perlin, Piotr Wiśniewski, Przemys$ł$aw Albrecht, Martin Wasilewski, Zbigniew R Porowski, Sylwester |
| description | We demonstrate true-blue (450--460 nm) nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE) on $c$-plane GaN substrates operating in continuous wave mode. The maximum optical power measured for these LDs is 80 mW, while the lifetime at the optical power of 10 mW is longer than 2000 h. We present a new LD design consisting of a separate confinement heterostructure with GaN claddings and thick In 0.08 Ga 0.92 N waveguides. We show that the key element responsible for the improvements in performance of the true-blue PAMBE LDs is the growth of InGaN quantum wells using a high nitrogen flux. |
| doi_str_mv | 10.1143/APEX.5.112103 |
| format | Article |
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| title | True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy |
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