High-Quality-Factor Light-Emitting Diodes with Modified Photonic Crystal Nanocavities Including Ge Self-Assembled Quantum Dots on Silicon-On-Insulator Substrates

High-quality-factor room-temperature light-emitting diodes based on Ge self-assembled quantum dots are successfully fabricated by employing a lateral p--i--n diode structure and a modified L3-type photonic crystal nanocavity. Sharp resonant peaks with Q-factor larger than 800, corresponding to the c...

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Veröffentlicht in:	Applied physics express 2012-10, Vol.5 (10), p.102101-102101-3
Hauptverfasser:	Xu, Xuejun, Chiba, Taichi, Nakama, Tatsuya, Maruizumi, Takuya, Shiraki, Yasuhiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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