Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

Backward diodes consisting of a heterojunction of p-GaAs 0.51 Sb 0.49 /n-InP, which was lattice matched to an InP substrate, were fabricated for the first time and investigated for their characteristics. The lattice-matched heterojunction is effective in preventing surface defects after crystal grow...

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Veröffentlicht in:Applied physics express 2012-09, Vol.5 (9), p.094201-094201-3
Hauptverfasser: Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki
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Sato, Masaru
Nakasha, Yasuhiro
Hara, Naoki
description Backward diodes consisting of a heterojunction of p-GaAs 0.51 Sb 0.49 /n-InP, which was lattice matched to an InP substrate, were fabricated for the first time and investigated for their characteristics. The lattice-matched heterojunction is effective in preventing surface defects after crystal growth of the diodes. The backward diodes indicated a curvature coefficient of $-17.6$ V -1 , which is sufficiently large for zero-bias operation. Voltage sensitivity of 338 V/W was obtained at 94 GHz by use of the circular mesa diode of 2.0 μm diameter. Optimum voltage sensitivity of 1603 V/W was estimated when the input impedance was completely matched with the diodes.
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title Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications
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