Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

We have investigated the site-controlled growth of InAs quantum dots (QDs) by using atomic-force-microscope (AFM)-assisted anodic oxidation. It is found that the morphology of the site-controlled QDs strongly depends on the growth temperature, $T_{\text{g}}$; when QDs are grown at $T_{\text{g}}\leq...

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Veröffentlicht in:	Applied physics express 2012-08, Vol.5 (8), p.085501-085501-3
Hauptverfasser:	Cha, Kyu Man, Horiuchi, Isao, Shibata, Kenji, Hirakawa, Kazuhiko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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