Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

We have investigated the site-controlled growth of InAs quantum dots (QDs) by using atomic-force-microscope (AFM)-assisted anodic oxidation. It is found that the morphology of the site-controlled QDs strongly depends on the growth temperature, $T_{\text{g}}$; when QDs are grown at $T_{\text{g}}\leq...

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Veröffentlicht in:Applied physics express 2012-08, Vol.5 (8), p.085501-085501-3
Hauptverfasser: Cha, Kyu Man, Horiuchi, Isao, Shibata, Kenji, Hirakawa, Kazuhiko
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Horiuchi, Isao
Shibata, Kenji
Hirakawa, Kazuhiko
description We have investigated the site-controlled growth of InAs quantum dots (QDs) by using atomic-force-microscope (AFM)-assisted anodic oxidation. It is found that the morphology of the site-controlled QDs strongly depends on the growth temperature, $T_{\text{g}}$; when QDs are grown at $T_{\text{g}}\leq 480$ °C, the obtained QDs are much larger than the nanoholes prepared by AFM oxidation. In contrast, when QDs are grown at $T_{\text{g}} = 520$ °C, the diameter of the QDs is limited by that of nanoholes and is almost unchanged with varying InAs supply. The single-layer QD array grown at 520 °C showed good optical properties and uniformities.
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title Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy
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