In situ Probe of GaN Film Surfaces under Plasma Conditions by Photoluminescence Technique

We have developed a method that enables us to in situ observe full photoluminescence (PL) spectra of n-type GaN film under plasma conditions. By subtracting background plasma noise from the total one, respectable luminescence of GaN film can be successfully obtained. After the plasma exposure, the n...

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Veröffentlicht in:	Applied physics express 2012-07, Vol.5 (7), p.076201-076201-3
Hauptverfasser:	Chen, Miao-Gen, Nakamura, Keiji, Nakano, Yoshitaka, Zhang, Gao-Hui, Sugai, Hideo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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