Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface

We report on the effect of light-induced deep-level defect activation at the AlN/Si interface of AlGaN/GaN power devices grown on silicon substrates for high-voltage applications. This effect appears as a bump in the $I$--$V$ characteristic at high voltage (HV) when the device is pinched off and exp...

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Veröffentlicht in:	Applied physics express 2011-09, Vol.4 (9), p.094101-094101-3
Hauptverfasser:	Visalli, Domenica, Hove, Marleen Van, Leys, Maarten, Derluyn, Joff, Simoen, Eddy, Srivastava, Puneet, Geens, Karen, Degroote, Stefan, Germain, Marianne, Nguyen, Anh Phuc Duc, Stesmans, André, Borghs, Gustaaf
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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