Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
We report on the effect of light-induced deep-level defect activation at the AlN/Si interface of AlGaN/GaN power devices grown on silicon substrates for high-voltage applications. This effect appears as a bump in the $I$--$V$ characteristic at high voltage (HV) when the device is pinched off and exp...
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| Veröffentlicht in: | Applied physics express 2011-09, Vol.4 (9), p.094101-094101-3 |
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| container_end_page | 094101-3 |
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| container_issue | 9 |
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| container_title | Applied physics express |
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| creator | Visalli, Domenica Hove, Marleen Van Leys, Maarten Derluyn, Joff Simoen, Eddy Srivastava, Puneet Geens, Karen Degroote, Stefan Germain, Marianne Nguyen, Anh Phuc Duc Stesmans, André Borghs, Gustaaf |
| description | We report on the effect of light-induced deep-level defect activation at the AlN/Si interface of AlGaN/GaN power devices grown on silicon substrates for high-voltage applications. This effect appears as a bump in the $I$--$V$ characteristic at high voltage (HV) when the device is pinched off and exposed to the light. No bump is detected when the device is measured in the dark. We investigate its spectral sensitivity under illumination with different wavelengths. Importantly, this effect can be eliminated by removing the Si substrate. This light-induced bump is related to a charging and discharging mechanism of deep acceptor-like level defects. |
| doi_str_mv | 10.1143/APEX.4.094101 |
| format | Article |
| fullrecord | <record><control><sourceid>ipap_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_APEX_4_094101</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_APEX_4_094101</sourcerecordid><originalsourceid>FETCH-LOGICAL-c363t-be4679378a12722a078a1e89f794072ff3169c1b39038f0c3bcaed6ad4dcdb683</originalsourceid><addsrcrecordid>eNqFkLFLxDAUh4MoeJ6O7lkd0kuakKRjOU8tFBVOwa2k6ctdpLaljQX_-2upuDq9b_j48fgQumU0YkzwTfq6-4hERBPBKDtDK6Z1TKjS8vyPlb5EV8PwSakUnMkV2mfNCEPwBxN82-DW4dwfjoFkTfVtocL3AB3JYYR6Qgc24NQGPy62CTgcAaf182bvcdYE6J2xcI0unKkHuPm9a_T-sHvbPpH85THbpjmxXPJAShBSJVxpw2IVx4bOBDpxKhFUxc5NDyaWlTyhXDtqeWkNVNJUorJVKTVfI7Ls2r4dhh5c0fX-y_Q_BaPFXKSYixSiWIpM_t3i-850_7gnGYZf8g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface</title><source>Institute of Physics Journals</source><creator>Visalli, Domenica ; Hove, Marleen Van ; Leys, Maarten ; Derluyn, Joff ; Simoen, Eddy ; Srivastava, Puneet ; Geens, Karen ; Degroote, Stefan ; Germain, Marianne ; Nguyen, Anh Phuc Duc ; Stesmans, André ; Borghs, Gustaaf</creator><creatorcontrib>Visalli, Domenica ; Hove, Marleen Van ; Leys, Maarten ; Derluyn, Joff ; Simoen, Eddy ; Srivastava, Puneet ; Geens, Karen ; Degroote, Stefan ; Germain, Marianne ; Nguyen, Anh Phuc Duc ; Stesmans, André ; Borghs, Gustaaf</creatorcontrib><description>We report on the effect of light-induced deep-level defect activation at the AlN/Si interface of AlGaN/GaN power devices grown on silicon substrates for high-voltage applications. This effect appears as a bump in the $I$--$V$ characteristic at high voltage (HV) when the device is pinched off and exposed to the light. No bump is detected when the device is measured in the dark. We investigate its spectral sensitivity under illumination with different wavelengths. Importantly, this effect can be eliminated by removing the Si substrate. This light-induced bump is related to a charging and discharging mechanism of deep acceptor-like level defects.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.1143/APEX.4.094101</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Applied physics express, 2011-09, Vol.4 (9), p.094101-094101-3</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-be4679378a12722a078a1e89f794072ff3169c1b39038f0c3bcaed6ad4dcdb683</citedby><cites>FETCH-LOGICAL-c363t-be4679378a12722a078a1e89f794072ff3169c1b39038f0c3bcaed6ad4dcdb683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Visalli, Domenica</creatorcontrib><creatorcontrib>Hove, Marleen Van</creatorcontrib><creatorcontrib>Leys, Maarten</creatorcontrib><creatorcontrib>Derluyn, Joff</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><creatorcontrib>Srivastava, Puneet</creatorcontrib><creatorcontrib>Geens, Karen</creatorcontrib><creatorcontrib>Degroote, Stefan</creatorcontrib><creatorcontrib>Germain, Marianne</creatorcontrib><creatorcontrib>Nguyen, Anh Phuc Duc</creatorcontrib><creatorcontrib>Stesmans, André</creatorcontrib><creatorcontrib>Borghs, Gustaaf</creatorcontrib><title>Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface</title><title>Applied physics express</title><description>We report on the effect of light-induced deep-level defect activation at the AlN/Si interface of AlGaN/GaN power devices grown on silicon substrates for high-voltage applications. This effect appears as a bump in the $I$--$V$ characteristic at high voltage (HV) when the device is pinched off and exposed to the light. No bump is detected when the device is measured in the dark. We investigate its spectral sensitivity under illumination with different wavelengths. Importantly, this effect can be eliminated by removing the Si substrate. This light-induced bump is related to a charging and discharging mechanism of deep acceptor-like level defects.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkLFLxDAUh4MoeJ6O7lkd0kuakKRjOU8tFBVOwa2k6ctdpLaljQX_-2upuDq9b_j48fgQumU0YkzwTfq6-4hERBPBKDtDK6Z1TKjS8vyPlb5EV8PwSakUnMkV2mfNCEPwBxN82-DW4dwfjoFkTfVtocL3AB3JYYR6Qgc24NQGPy62CTgcAaf182bvcdYE6J2xcI0unKkHuPm9a_T-sHvbPpH85THbpjmxXPJAShBSJVxpw2IVx4bOBDpxKhFUxc5NDyaWlTyhXDtqeWkNVNJUorJVKTVfI7Ls2r4dhh5c0fX-y_Q_BaPFXKSYixSiWIpM_t3i-850_7gnGYZf8g</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Visalli, Domenica</creator><creator>Hove, Marleen Van</creator><creator>Leys, Maarten</creator><creator>Derluyn, Joff</creator><creator>Simoen, Eddy</creator><creator>Srivastava, Puneet</creator><creator>Geens, Karen</creator><creator>Degroote, Stefan</creator><creator>Germain, Marianne</creator><creator>Nguyen, Anh Phuc Duc</creator><creator>Stesmans, André</creator><creator>Borghs, Gustaaf</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110901</creationdate><title>Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface</title><author>Visalli, Domenica ; Hove, Marleen Van ; Leys, Maarten ; Derluyn, Joff ; Simoen, Eddy ; Srivastava, Puneet ; Geens, Karen ; Degroote, Stefan ; Germain, Marianne ; Nguyen, Anh Phuc Duc ; Stesmans, André ; Borghs, Gustaaf</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-be4679378a12722a078a1e89f794072ff3169c1b39038f0c3bcaed6ad4dcdb683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Visalli, Domenica</creatorcontrib><creatorcontrib>Hove, Marleen Van</creatorcontrib><creatorcontrib>Leys, Maarten</creatorcontrib><creatorcontrib>Derluyn, Joff</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><creatorcontrib>Srivastava, Puneet</creatorcontrib><creatorcontrib>Geens, Karen</creatorcontrib><creatorcontrib>Degroote, Stefan</creatorcontrib><creatorcontrib>Germain, Marianne</creatorcontrib><creatorcontrib>Nguyen, Anh Phuc Duc</creatorcontrib><creatorcontrib>Stesmans, André</creatorcontrib><creatorcontrib>Borghs, Gustaaf</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Visalli, Domenica</au><au>Hove, Marleen Van</au><au>Leys, Maarten</au><au>Derluyn, Joff</au><au>Simoen, Eddy</au><au>Srivastava, Puneet</au><au>Geens, Karen</au><au>Degroote, Stefan</au><au>Germain, Marianne</au><au>Nguyen, Anh Phuc Duc</au><au>Stesmans, André</au><au>Borghs, Gustaaf</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface</atitle><jtitle>Applied physics express</jtitle><date>2011-09-01</date><risdate>2011</risdate><volume>4</volume><issue>9</issue><spage>094101</spage><epage>094101-3</epage><pages>094101-094101-3</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><abstract>We report on the effect of light-induced deep-level defect activation at the AlN/Si interface of AlGaN/GaN power devices grown on silicon substrates for high-voltage applications. This effect appears as a bump in the $I$--$V$ characteristic at high voltage (HV) when the device is pinched off and exposed to the light. No bump is detected when the device is measured in the dark. We investigate its spectral sensitivity under illumination with different wavelengths. Importantly, this effect can be eliminated by removing the Si substrate. This light-induced bump is related to a charging and discharging mechanism of deep acceptor-like level defects.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/APEX.4.094101</doi></addata></record> |
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| ispartof | Applied physics express, 2011-09, Vol.4 (9), p.094101-094101-3 |
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| source | Institute of Physics Journals |
| title | Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T20%3A24%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ipap_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20Light-Induced%20Deep-Level%20Defect%20Activation%20at%20the%20AlN/Si%20Interface&rft.jtitle=Applied%20physics%20express&rft.au=Visalli,%20Domenica&rft.date=2011-09-01&rft.volume=4&rft.issue=9&rft.spage=094101&rft.epage=094101-3&rft.pages=094101-094101-3&rft.issn=1882-0778&rft.eissn=1882-0786&rft_id=info:doi/10.1143/APEX.4.094101&rft_dat=%3Cipap_cross%3E10_1143_APEX_4_094101%3C/ipap_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |