Three-Dimensional Structure Analysis of Metal--Oxide--Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
To clarify the origin of on-state drain current ($I_{\text{ON}}$) variability in metal--oxide--semiconductor field-effect transistors (MOSFETs), we applied three-dimensional scanning transmission electron microscopy (3D STEM) observation to two transistors that had different $I_{\text{ON}}$ values b...
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| Veröffentlicht in: | Applied physics express 2011-06, Vol.4 (6), p.066601-066601-3 |
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| creator | Ono, Shiano Yamane, Miyuki Okushima, Hirohisa Koguchi, Masanari Shinada, Hiroyuki Kakibayashi, Hiroshi Yano, Fumiko Tsunomura, Takaaki Nishida, Akio Mogami, Tohru |
| description | To clarify the origin of on-state drain current ($I_{\text{ON}}$) variability in metal--oxide--semiconductor field-effect transistors (MOSFETs), we applied three-dimensional scanning transmission electron microscopy (3D STEM) observation to two transistors that had different $I_{\text{ON}}$ values but the same threshold voltage ($V_{\text{T}}$). The results clearly showed a difference in the distance between the gate and source/drain silicide, suggesting that the $I_{\text{ON}}$ difference between two transistors can be explained by the difference in the source/drain extension resistance. We showed that it is possible to discuss the 3D device structures in relation to their electrical characteristics. |
| doi_str_mv | 10.1143/APEX.4.066601 |
| format | Article |
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The results clearly showed a difference in the distance between the gate and source/drain silicide, suggesting that the $I_{\text{ON}}$ difference between two transistors can be explained by the difference in the source/drain extension resistance. We showed that it is possible to discuss the 3D device structures in relation to their electrical characteristics.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.1143/APEX.4.066601</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Applied physics express, 2011-06, Vol.4 (6), p.066601-066601-3</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c271t-eef26add0976d538bf8281d72f26b850dda1bca1b8a5b1b5537e9d9e7c71acc33</citedby><cites>FETCH-LOGICAL-c271t-eef26add0976d538bf8281d72f26b850dda1bca1b8a5b1b5537e9d9e7c71acc33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ono, Shiano</creatorcontrib><creatorcontrib>Yamane, Miyuki</creatorcontrib><creatorcontrib>Okushima, Hirohisa</creatorcontrib><creatorcontrib>Koguchi, Masanari</creatorcontrib><creatorcontrib>Shinada, Hiroyuki</creatorcontrib><creatorcontrib>Kakibayashi, Hiroshi</creatorcontrib><creatorcontrib>Yano, Fumiko</creatorcontrib><creatorcontrib>Tsunomura, Takaaki</creatorcontrib><creatorcontrib>Nishida, Akio</creatorcontrib><creatorcontrib>Mogami, Tohru</creatorcontrib><title>Three-Dimensional Structure Analysis of Metal--Oxide--Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy</title><title>Applied physics express</title><description>To clarify the origin of on-state drain current ($I_{\text{ON}}$) variability in metal--oxide--semiconductor field-effect transistors (MOSFETs), we applied three-dimensional scanning transmission electron microscopy (3D STEM) observation to two transistors that had different $I_{\text{ON}}$ values but the same threshold voltage ($V_{\text{T}}$). The results clearly showed a difference in the distance between the gate and source/drain silicide, suggesting that the $I_{\text{ON}}$ difference between two transistors can be explained by the difference in the source/drain extension resistance. 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The results clearly showed a difference in the distance between the gate and source/drain silicide, suggesting that the $I_{\text{ON}}$ difference between two transistors can be explained by the difference in the source/drain extension resistance. We showed that it is possible to discuss the 3D device structures in relation to their electrical characteristics.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/APEX.4.066601</doi></addata></record> |
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| title | Three-Dimensional Structure Analysis of Metal--Oxide--Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy |
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