Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography
The influences of pattern size and etching depth of patterned sapphire substrates (PSSs) on crystal quality and light output power of light-emitting diodes (LEDs) were investigated by contact-transferred and mask-embedded lithography. The present results indicate that a smaller pattern size facilita...
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| Veröffentlicht in: | Applied physics express 2011-06, Vol.4 (6), p.062102-062102-3 |
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| container_title | Applied physics express |
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| creator | Kao, Chien-Chih Su, Yan-Kuin Hsieh, Yi-Ta Lee, Yung-Chun Cheng, Chiao-Yang Lin, Chuing-Liang |
| description | The influences of pattern size and etching depth of patterned sapphire substrates (PSSs) on crystal quality and light output power of light-emitting diodes (LEDs) were investigated by contact-transferred and mask-embedded lithography. The present results indicate that a smaller pattern size facilitates superior light extraction efficiency. However, a suitable pattern size and etching depth should be chosen to obtain the highest quality of GaN film. In comparison with the conventional sapphire substrate, the largest light output enhancement (${\sim}28.9$%) was observed when the pattern diameter and the etching depth of PSS were 400 and 400 nm, respectively. |
| doi_str_mv | 10.1143/APEX.4.062102 |
| format | Article |
| fullrecord | <record><control><sourceid>ipap_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_APEX_4_062102</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_APEX_4_062102</sourcerecordid><originalsourceid>FETCH-LOGICAL-c363t-a74e4ff8e97c3fe475a2642054792325cb48aca350714e42ed5d925f88b180dd3</originalsourceid><addsrcrecordid>eNqF0DtPwzAUBeAIgUQpjOxeGVz8SuKOpZRSqUClFoktuontxDycyDag_gd-NClFrEz3Dp_OkU6SnFMyolTwy8lq9jQSI5IxSthBMqBSMkxymR3-_bk8Tk5CeCYkE5xmg-Rr4T50iLaGaFuHWoPmcI-vIGiFlrZuIp692Ritq9G1bZUOaO7bzx46tIIYtXc9XEPXNdZrtH4vQ_QQe1Zu0bR1EaqINx5cMNr7noJT6A7CSx9baqV-WmLT1h66ZnuaHBl4Dfrs9w6Tx5vZZnqLlw_zxXSyxBXPeMSQCy2MkXqcV9xokafAMsFIKvIx4yytSiGhAp6SnPaSaZWqMUuNlCWVRCk-TPA-t_JtCF6bovP2Dfy2oKTYTVnspixEsZ-y9xd7bzvo_rHfqKR1iA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Kao, Chien-Chih ; Su, Yan-Kuin ; Hsieh, Yi-Ta ; Lee, Yung-Chun ; Cheng, Chiao-Yang ; Lin, Chuing-Liang</creator><creatorcontrib>Kao, Chien-Chih ; Su, Yan-Kuin ; Hsieh, Yi-Ta ; Lee, Yung-Chun ; Cheng, Chiao-Yang ; Lin, Chuing-Liang</creatorcontrib><description>The influences of pattern size and etching depth of patterned sapphire substrates (PSSs) on crystal quality and light output power of light-emitting diodes (LEDs) were investigated by contact-transferred and mask-embedded lithography. The present results indicate that a smaller pattern size facilitates superior light extraction efficiency. However, a suitable pattern size and etching depth should be chosen to obtain the highest quality of GaN film. In comparison with the conventional sapphire substrate, the largest light output enhancement (${\sim}28.9$%) was observed when the pattern diameter and the etching depth of PSS were 400 and 400 nm, respectively.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.1143/APEX.4.062102</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Applied physics express, 2011-06, Vol.4 (6), p.062102-062102-3</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-a74e4ff8e97c3fe475a2642054792325cb48aca350714e42ed5d925f88b180dd3</citedby><cites>FETCH-LOGICAL-c363t-a74e4ff8e97c3fe475a2642054792325cb48aca350714e42ed5d925f88b180dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kao, Chien-Chih</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><creatorcontrib>Hsieh, Yi-Ta</creatorcontrib><creatorcontrib>Lee, Yung-Chun</creatorcontrib><creatorcontrib>Cheng, Chiao-Yang</creatorcontrib><creatorcontrib>Lin, Chuing-Liang</creatorcontrib><title>Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography</title><title>Applied physics express</title><description>The influences of pattern size and etching depth of patterned sapphire substrates (PSSs) on crystal quality and light output power of light-emitting diodes (LEDs) were investigated by contact-transferred and mask-embedded lithography. The present results indicate that a smaller pattern size facilitates superior light extraction efficiency. However, a suitable pattern size and etching depth should be chosen to obtain the highest quality of GaN film. In comparison with the conventional sapphire substrate, the largest light output enhancement (${\sim}28.9$%) was observed when the pattern diameter and the etching depth of PSS were 400 and 400 nm, respectively.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqF0DtPwzAUBeAIgUQpjOxeGVz8SuKOpZRSqUClFoktuontxDycyDag_gd-NClFrEz3Dp_OkU6SnFMyolTwy8lq9jQSI5IxSthBMqBSMkxymR3-_bk8Tk5CeCYkE5xmg-Rr4T50iLaGaFuHWoPmcI-vIGiFlrZuIp692Ritq9G1bZUOaO7bzx46tIIYtXc9XEPXNdZrtH4vQ_QQe1Zu0bR1EaqINx5cMNr7noJT6A7CSx9baqV-WmLT1h66ZnuaHBl4Dfrs9w6Tx5vZZnqLlw_zxXSyxBXPeMSQCy2MkXqcV9xokafAMsFIKvIx4yytSiGhAp6SnPaSaZWqMUuNlCWVRCk-TPA-t_JtCF6bovP2Dfy2oKTYTVnspixEsZ-y9xd7bzvo_rHfqKR1iA</recordid><startdate>20110601</startdate><enddate>20110601</enddate><creator>Kao, Chien-Chih</creator><creator>Su, Yan-Kuin</creator><creator>Hsieh, Yi-Ta</creator><creator>Lee, Yung-Chun</creator><creator>Cheng, Chiao-Yang</creator><creator>Lin, Chuing-Liang</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110601</creationdate><title>Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography</title><author>Kao, Chien-Chih ; Su, Yan-Kuin ; Hsieh, Yi-Ta ; Lee, Yung-Chun ; Cheng, Chiao-Yang ; Lin, Chuing-Liang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-a74e4ff8e97c3fe475a2642054792325cb48aca350714e42ed5d925f88b180dd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kao, Chien-Chih</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><creatorcontrib>Hsieh, Yi-Ta</creatorcontrib><creatorcontrib>Lee, Yung-Chun</creatorcontrib><creatorcontrib>Cheng, Chiao-Yang</creatorcontrib><creatorcontrib>Lin, Chuing-Liang</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kao, Chien-Chih</au><au>Su, Yan-Kuin</au><au>Hsieh, Yi-Ta</au><au>Lee, Yung-Chun</au><au>Cheng, Chiao-Yang</au><au>Lin, Chuing-Liang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography</atitle><jtitle>Applied physics express</jtitle><date>2011-06-01</date><risdate>2011</risdate><volume>4</volume><issue>6</issue><spage>062102</spage><epage>062102-3</epage><pages>062102-062102-3</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><abstract>The influences of pattern size and etching depth of patterned sapphire substrates (PSSs) on crystal quality and light output power of light-emitting diodes (LEDs) were investigated by contact-transferred and mask-embedded lithography. The present results indicate that a smaller pattern size facilitates superior light extraction efficiency. However, a suitable pattern size and etching depth should be chosen to obtain the highest quality of GaN film. In comparison with the conventional sapphire substrate, the largest light output enhancement (${\sim}28.9$%) was observed when the pattern diameter and the etching depth of PSS were 400 and 400 nm, respectively.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.1143/APEX.4.062102</doi></addata></record> |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography |
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