Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching

We report the growth and separation of a high quality GaN epilayer from a sapphire substrate using lateral epitaxial overgrowth (LEO) and a wet chemical etching process. A high quality GaN epilayer was grown by the LEO method using a SiO 2 -coated tungsten (W) mask. The LEO GaN epilayer was separate...

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Veröffentlicht in:	Applied physics express 2011-01, Vol.4 (1), p.012104-012104-3
Hauptverfasser:	Cho, Chu-Young, Lee, Sang-Jun, Hong, Sang-Hyun, Park, Seung-Chul, Park, Seong-Eun, Park, Yongjo, Park, Seong-Ju
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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