Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain

Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics express 2009-03, Vol.2, p.34501
Hauptverfasser: Saito, Hisashi, Miyamoto, Yasuyuki, Furuya, Kazuhito
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page 34501
container_title Applied physics express
container_volume 2
creator Saito, Hisashi
Miyamoto, Yasuyuki
Furuya, Kazuhito
description
doi_str_mv 10.1143/APEX.2.034501
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_APEX_2_034501</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_APEX_2_034501</sourcerecordid><originalsourceid>FETCH-LOGICAL-c303t-9db2d0c56c28da68e5e56243d2f29a6ff8f9dc8730c44fd4a23359b59841bc783</originalsourceid><addsrcrecordid>eNo9kE1LwzAAhoMoOKdH7_kDrflqmh7HqFth4A5TvJU0H7PSJiPJBP-9Kx2e3pfnhffwAPCMUY4xoy-rff2ZkxxRViB8AxZYCJKhUvDb_16Ke_AQ4zdCnFHMF8A14yn4HzMal2Dv4EYmAxsXz4NMvXcTatwebn2C9WBUChd2CNLFPiYfIrQ-wG1__Jqh8k6fVZJOGSidnpcPPyR5NJfr3j2COyuHaJ6uuQTvr_Vhvc12b5tmvdpliiKaskp3RCNVcEWEllyYwhScMKqJJZXk1gpbaSVKihRjVjNJKC2qrqgEw50qBV2CbP5VwccYjG1PoR9l-G0xaidZ7SSrJe0si_4BId5d6Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Saito, Hisashi ; Miyamoto, Yasuyuki ; Furuya, Kazuhito</creator><creatorcontrib>Saito, Hisashi ; Miyamoto, Yasuyuki ; Furuya, Kazuhito</creatorcontrib><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.1143/APEX.2.034501</identifier><language>eng</language><ispartof>Applied physics express, 2009-03, Vol.2, p.34501</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c303t-9db2d0c56c28da68e5e56243d2f29a6ff8f9dc8730c44fd4a23359b59841bc783</citedby><cites>FETCH-LOGICAL-c303t-9db2d0c56c28da68e5e56243d2f29a6ff8f9dc8730c44fd4a23359b59841bc783</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Saito, Hisashi</creatorcontrib><creatorcontrib>Miyamoto, Yasuyuki</creatorcontrib><creatorcontrib>Furuya, Kazuhito</creatorcontrib><title>Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain</title><title>Applied physics express</title><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LwzAAhoMoOKdH7_kDrflqmh7HqFth4A5TvJU0H7PSJiPJBP-9Kx2e3pfnhffwAPCMUY4xoy-rff2ZkxxRViB8AxZYCJKhUvDb_16Ke_AQ4zdCnFHMF8A14yn4HzMal2Dv4EYmAxsXz4NMvXcTatwebn2C9WBUChd2CNLFPiYfIrQ-wG1__Jqh8k6fVZJOGSidnpcPPyR5NJfr3j2COyuHaJ6uuQTvr_Vhvc12b5tmvdpliiKaskp3RCNVcEWEllyYwhScMKqJJZXk1gpbaSVKihRjVjNJKC2qrqgEw50qBV2CbP5VwccYjG1PoR9l-G0xaidZ7SSrJe0si_4BId5d6Q</recordid><startdate>20090301</startdate><enddate>20090301</enddate><creator>Saito, Hisashi</creator><creator>Miyamoto, Yasuyuki</creator><creator>Furuya, Kazuhito</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090301</creationdate><title>Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain</title><author>Saito, Hisashi ; Miyamoto, Yasuyuki ; Furuya, Kazuhito</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c303t-9db2d0c56c28da68e5e56243d2f29a6ff8f9dc8730c44fd4a23359b59841bc783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saito, Hisashi</creatorcontrib><creatorcontrib>Miyamoto, Yasuyuki</creatorcontrib><creatorcontrib>Furuya, Kazuhito</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saito, Hisashi</au><au>Miyamoto, Yasuyuki</au><au>Furuya, Kazuhito</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain</atitle><jtitle>Applied physics express</jtitle><date>2009-03-01</date><risdate>2009</risdate><volume>2</volume><spage>34501</spage><pages>34501-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><doi>10.1143/APEX.2.034501</doi></addata></record>
fulltext fulltext
identifier ISSN: 1882-0778
ispartof Applied physics express, 2009-03, Vol.2, p.34501
issn 1882-0778
1882-0786
language eng
recordid cdi_crossref_primary_10_1143_APEX_2_034501
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T10%3A05%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improvement%20in%20Gate%20Insulation%20in%20InP%20Hot%20Electron%20Transistors%20for%20High%20Transconductance%20and%20High%20Voltage%20Gain&rft.jtitle=Applied%20physics%20express&rft.au=Saito,%20Hisashi&rft.date=2009-03-01&rft.volume=2&rft.spage=34501&rft.pages=34501-&rft.issn=1882-0778&rft.eissn=1882-0786&rft_id=info:doi/10.1143/APEX.2.034501&rft_dat=%3Ccrossref%3E10_1143_APEX_2_034501%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true