Structural peculiarities of amorphous semiconductors As33.3Se33.3S33.4 and As33.3Se33.3Te33.4 doped with samarium

Structural peculiarities of amorphous semiconductors As33.3Se33.3S33.4 and As33.3Se33.3Te33.4 doped with samarium

The structure of chalcogenide vitreous semiconductors (CVSs) As 33.3 Se 33.3 S 33.4 and As 33.3 Se 33.3 Te 33.4 and the influence on them of samarium additives is studied using the technique of X-ray diffraction. The observed peculiarities of the diffraction picture are explained by the Elliott void...

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Veröffentlicht in:Glass physics and chemistry 2014-09, Vol.40 (5), p.549-552
Hauptverfasser: Alekberov, R. I., Isayeva, G. A., Mekhtiyeva, S. I., Isayev, A. I.
Format: Artikel
Sprache:eng
Schlagworte:
Ceramics
Characterization and Evaluation of Materials
Chemistry and Materials Science
Composites
Glass
Materials Science
Natural Materials
Physical Chemistry
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Zusammenfassung:The structure of chalcogenide vitreous semiconductors (CVSs) As 33.3 Se 33.3 S 33.4 and As 33.3 Se 33.3 Te 33.4 and the influence on them of samarium additives is studied using the technique of X-ray diffraction. The observed peculiarities of the diffraction picture are explained by the Elliott void-cluster model. The structural parameters of CVS materials As 33.3 Se 33.3 S 33.4 and As 33.3 Se 33.3 Te 33.4 with and without admixtures of samarium are determined.
ISSN:1087-6596
1608-313X
DOI:10.1134/S1087659614050022