A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates
GaAs nanowires (NWs) were generated on the surface of GaAs(111) B and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE)...
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| Veröffentlicht in: | Technical physics letters 2020-02, Vol.46 (2), p.161-164 |
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| creator | Emelyanov, E. A. Nastovjak, A. G. Petrushkov, M. O. Esin, M. Yu Gavrilova, T. A. Putyato, M. A. Schwartz, N. L. Shvets, V. A. Vasev, A. V. Semyagin, B. R. Preobrazhenskii, V. V. |
| description | GaAs nanowires (NWs) were generated on the surface of GaAs(111)
B
and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 10
7
and 3 × 10
7
cm
–2
for (111)
B
and (100), respectively. |
| doi_str_mv | 10.1134/S1063785020020194 |
| format | Article |
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B
and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 10
7
and 3 × 10
7
cm
–2
for (111)
B
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B
and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 10
7
and 3 × 10
7
cm
–2
for (111)
B
and (100), respectively.</description><subject>Atomic force microscopy</subject><subject>Classical and Continuum Physics</subject><subject>Ellipsometry</subject><subject>Epitaxial growth</subject><subject>Fluxes</subject><subject>Gallium arsenide</subject><subject>Heterostructures</subject><subject>Microscopy</subject><subject>Molecular beam epitaxy</subject><subject>Morphology</subject><subject>Nanowires</subject><subject>Oxidation</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics, Applied</subject><subject>Science & Technology</subject><subject>Silicon</subject><subject>Substrates</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AOWDO</sourceid><recordid>eNqNkMtKAzEUhgdRsF4ewF3AjUVGz8llZrJsB61C1UV1PaTTxE6tk5qk1L69KS26EMFDICfk_87lT5IzhCtExq9HCBnLCwEU4kHJ95IOgoQ0E4ztb_KMpZv_w-TI-xkAFFTITuJ65EH5N9JXXk-IbYkio4bcLJqgPhs1J0O11o4Y60iYajLSc5OWKqj5OjQ1eVStXTVOk4GzqzDd4APV8xeI2O0T1U52T4AuGS3HPjgVtD9JDoyae326u4-Tl9ub5_IuHT4N7sveMK0ZZiE1OTCNuRYcgEvBY9A6j9swnNRIZc4MzzhIRF5QrcaGTYQ0nGcwloozzo6T823dhbMfS-1DNbNL18aWFWVS5DEKEVW4VdXOeu-0qRaueVduXSFUG2urX9ZG5nLLrPTYGl83uq31Nxe9FVQyQUXMMIvq4v_qMhofGtuWdtmGiNIt6qO8fdXuZ4W_p_sCKaKWDA</recordid><startdate>20200201</startdate><enddate>20200201</enddate><creator>Emelyanov, E. A.</creator><creator>Nastovjak, A. G.</creator><creator>Petrushkov, M. O.</creator><creator>Esin, M. Yu</creator><creator>Gavrilova, T. A.</creator><creator>Putyato, M. A.</creator><creator>Schwartz, N. L.</creator><creator>Shvets, V. A.</creator><creator>Vasev, A. V.</creator><creator>Semyagin, B. R.</creator><creator>Preobrazhenskii, V. V.</creator><general>Pleiades Publishing</general><general>Springer Nature</general><general>Springer Nature B.V</general><scope>AOWDO</scope><scope>BLEPL</scope><scope>DTL</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-9974-7144</orcidid><orcidid>https://orcid.org/0000-0001-7335-668X</orcidid><orcidid>https://orcid.org/0000-0003-3700-506X</orcidid></search><sort><creationdate>20200201</creationdate><title>A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates</title><author>Emelyanov, E. A. ; Nastovjak, A. G. ; Petrushkov, M. O. ; Esin, M. Yu ; Gavrilova, T. A. ; Putyato, M. A. ; Schwartz, N. L. ; Shvets, V. A. ; Vasev, A. V. ; Semyagin, B. R. ; Preobrazhenskii, V. 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G.</creatorcontrib><creatorcontrib>Petrushkov, M. O.</creatorcontrib><creatorcontrib>Esin, M. Yu</creatorcontrib><creatorcontrib>Gavrilova, T. A.</creatorcontrib><creatorcontrib>Putyato, M. A.</creatorcontrib><creatorcontrib>Schwartz, N. L.</creatorcontrib><creatorcontrib>Shvets, V. A.</creatorcontrib><creatorcontrib>Vasev, A. V.</creatorcontrib><creatorcontrib>Semyagin, B. R.</creatorcontrib><creatorcontrib>Preobrazhenskii, V. V.</creatorcontrib><collection>Web of Science - Science Citation Index Expanded - 2020</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>CrossRef</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Emelyanov, E. A.</au><au>Nastovjak, A. G.</au><au>Petrushkov, M. O.</au><au>Esin, M. Yu</au><au>Gavrilova, T. A.</au><au>Putyato, M. A.</au><au>Schwartz, N. L.</au><au>Shvets, V. A.</au><au>Vasev, A. V.</au><au>Semyagin, B. R.</au><au>Preobrazhenskii, V. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><stitle>TECH PHYS LETT</stitle><date>2020-02-01</date><risdate>2020</risdate><volume>46</volume><issue>2</issue><spage>161</spage><epage>164</epage><pages>161-164</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>GaAs nanowires (NWs) were generated on the surface of GaAs(111)
B
and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 10
7
and 3 × 10
7
cm
–2
for (111)
B
and (100), respectively.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785020020194</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-9974-7144</orcidid><orcidid>https://orcid.org/0000-0001-7335-668X</orcidid><orcidid>https://orcid.org/0000-0003-3700-506X</orcidid></addata></record> |
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| source | SpringerNature Journals; Web of Science - Science Citation Index Expanded - 2020<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" /> |
| subjects | Atomic force microscopy Classical and Continuum Physics Ellipsometry Epitaxial growth Fluxes Gallium arsenide Heterostructures Microscopy Molecular beam epitaxy Morphology Nanowires Oxidation Physical Sciences Physics Physics and Astronomy Physics, Applied Science & Technology Silicon Substrates |
| title | A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates |
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