Computer simulation of the growth of GaAs nanowhiskers with inhomogeneous crystal structures

Computer simulation of the growth of GaAs nanowhiskers with inhomogeneous crystal structures

A physical model is proposed for the growth of GaAs nanowhiskers (NWs) with inhomogeneous crystal structures during the molecular beam epitaxy. Numerical calculations performed using this model give the temporal variation of the growth rate and the height of NWs and indicate the moments of switching...

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Veröffentlicht in:Technical physics letters 2009-02, Vol.35 (2), p.99-102
Hauptverfasser: Lubov, M. N., Kulikov, D. V., Trushin, Yu. V.
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creator Lubov, M. N.
Kulikov, D. V.
Trushin, Yu. V.
description A physical model is proposed for the growth of GaAs nanowhiskers (NWs) with inhomogeneous crystal structures during the molecular beam epitaxy. Numerical calculations performed using this model give the temporal variation of the growth rate and the height of NWs and indicate the moments of switching from one crystal phase to another. The results of calculations coincide with the available experimental data.
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Physics and Astronomy
title Computer simulation of the growth of GaAs nanowhiskers with inhomogeneous crystal structures
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