Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sapphire
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| Veröffentlicht in: | Technical physics 2023-12, Vol.68 (12), p.689-694 |
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| container_issue | 12 |
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| container_title | Technical physics |
| container_volume | 68 |
| creator | Nikolaev, V. I. Polyakov, A. Ya Stepanov, S. I. Pechnikov, A. I. Nikolaev, V. V. Yakimov, E. B. Scheglov, M. P. Chikiryaka, A. V. Guzilova, L. I. Timashov, R. B. Shapenkov, S. V. Butenko, P. N. |
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| doi_str_mv | 10.1134/S1063784223080236 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1063-7842 |
| ispartof | Technical physics, 2023-12, Vol.68 (12), p.689-694 |
| issn | 1063-7842 1090-6525 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S1063784223080236 |
| source | SpringerNature Journals |
| title | Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sapphire |
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