Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation
Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As 2 S 3 and As 2 S 3 semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interferenc...
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| Veröffentlicht in: | Technical physics 2009-02, Vol.54 (2), p.305-308 |
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| container_title | Technical physics |
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| creator | Nastas, A. M. Andriesh, A. M. Bivol, V. V. Prisakar, A. M. Tridukh, G. M. |
| description | Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As
2
S
3
and As
2
S
3
semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%. |
| doi_str_mv | 10.1134/S1063784209020236 |
| format | Article |
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2
S
3
and As
2
S
3
semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%.</description><identifier>ISSN: 1063-7842</identifier><identifier>EISSN: 1090-6525</identifier><identifier>DOI: 10.1134/S1063784209020236</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Classical and Continuum Physics ; Physics ; Physics and Astronomy ; Short Communications</subject><ispartof>Technical physics, 2009-02, Vol.54 (2), p.305-308</ispartof><rights>Pleiades Publishing, Ltd. 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-cbe0eccc5d0d7e0352152c4093ad844f602dd6236cd000301a39b1c9ad253c333</citedby><cites>FETCH-LOGICAL-c354t-cbe0eccc5d0d7e0352152c4093ad844f602dd6236cd000301a39b1c9ad253c333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063784209020236$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063784209020236$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Nastas, A. M.</creatorcontrib><creatorcontrib>Andriesh, A. M.</creatorcontrib><creatorcontrib>Bivol, V. V.</creatorcontrib><creatorcontrib>Prisakar, A. M.</creatorcontrib><creatorcontrib>Tridukh, G. M.</creatorcontrib><title>Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation</title><title>Technical physics</title><addtitle>Tech. Phys</addtitle><description>Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As
2
S
3
and As
2
S
3
semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%.</description><subject>Classical and Continuum Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Short Communications</subject><issn>1063-7842</issn><issn>1090-6525</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kM1OwzAQhC0EEqXwANz8AoG1HbvJEVX8SZU4AOfIXduJq9Su7PTQt8dRuSFxmpF2v9HuEHLP4IExUT9-MlBi1dQcWuDAhbogC1Z8pSSXl7NXoprn1-Qm5x0AY41UC5LWg069Dz2NjvajzvlEcdAjxt4GbyzNdu8xBnPEKaZMfaAYUwyaGp9xZi3VwVA_ZWqdszjRGOgQx9gnfRg80qLTnO9i2hcXwy25cnrM9u5Xl-T75flr_VZtPl7f10-bCoWspwq3FiwiSgNmZUFIziTHGlqhTVPXTgE3RpVP0QCAAKZFu2XYasOlQCHEkrBzLqaYc7KuOyS_1-nUMejm0ro_pRWGn5lcdkNvU7eLxxTKmf9APwIUcG4</recordid><startdate>20090201</startdate><enddate>20090201</enddate><creator>Nastas, A. M.</creator><creator>Andriesh, A. M.</creator><creator>Bivol, V. V.</creator><creator>Prisakar, A. M.</creator><creator>Tridukh, G. M.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090201</creationdate><title>Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation</title><author>Nastas, A. M. ; Andriesh, A. M. ; Bivol, V. V. ; Prisakar, A. M. ; Tridukh, G. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-cbe0eccc5d0d7e0352152c4093ad844f602dd6236cd000301a39b1c9ad253c333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Classical and Continuum Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Short Communications</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nastas, A. M.</creatorcontrib><creatorcontrib>Andriesh, A. M.</creatorcontrib><creatorcontrib>Bivol, V. V.</creatorcontrib><creatorcontrib>Prisakar, A. M.</creatorcontrib><creatorcontrib>Tridukh, G. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nastas, A. M.</au><au>Andriesh, A. M.</au><au>Bivol, V. V.</au><au>Prisakar, A. M.</au><au>Tridukh, G. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation</atitle><jtitle>Technical physics</jtitle><stitle>Tech. Phys</stitle><date>2009-02-01</date><risdate>2009</risdate><volume>54</volume><issue>2</issue><spage>305</spage><epage>308</epage><pages>305-308</pages><issn>1063-7842</issn><eissn>1090-6525</eissn><abstract>Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As
2
S
3
and As
2
S
3
semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063784209020236</doi><tpages>4</tpages></addata></record> |
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| ispartof | Technical physics, 2009-02, Vol.54 (2), p.305-308 |
| issn | 1063-7842 1090-6525 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S1063784209020236 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Classical and Continuum Physics Physics Physics and Astronomy Short Communications |
| title | Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation |
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