Effect of Sc and Yb doping on electrical and luminescence properties of silicon produced by the Stockbarger method
The effect of scandium and ytterbium doping on the electrical and luminescence properties of polycrystalline silicon produced by the Stockbarger method was studied. It is found that the resistivity, the lifetime of minority charge carriers, and the position of the maximum of the low-temperature lumi...
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| Veröffentlicht in: | Physics of the solid state 2008-09, Vol.50 (9), p.1736-1739 |
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| container_title | Physics of the solid state |
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| creator | Shamirzaev, T. S. Nepomnyashchikh, A. I. Krasin, B. A. Semenova, O. I. Tokarev, A. S. Borodovkiĭ, P. A. Buldygin, A. F. Sarychev, P. P. |
| description | The effect of scandium and ytterbium doping on the electrical and luminescence properties of polycrystalline silicon produced by the Stockbarger method was studied. It is found that the resistivity, the lifetime of minority charge carriers, and the position of the maximum of the low-temperature luminescence band, which are constant along the growth direction for undoped ingots, vary monotonically along the growth direction for doped ingots. Analysis of the photoluminescence spectra and conductivity in different parts of the doped ingots shows that variations in their electrical properties along the growth direction are due to a redistribution of background acceptors, whose concentration decreases steadily from the beginning of an ingot toward its end. The redistribution of the background impurities is related to the formation of background-impurity-doping impurity compounds, for which the distribution coefficients significantly deviate from unity in a silicon melt. |
| doi_str_mv | 10.1134/S1063783408090291 |
| format | Article |
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S. ; Nepomnyashchikh, A. I. ; Krasin, B. A. ; Semenova, O. I. ; Tokarev, A. S. ; Borodovkiĭ, P. A. ; Buldygin, A. F. ; Sarychev, P. P.</creator><creatorcontrib>Shamirzaev, T. S. ; Nepomnyashchikh, A. I. ; Krasin, B. A. ; Semenova, O. I. ; Tokarev, A. S. ; Borodovkiĭ, P. A. ; Buldygin, A. F. ; Sarychev, P. P.</creatorcontrib><description>The effect of scandium and ytterbium doping on the electrical and luminescence properties of polycrystalline silicon produced by the Stockbarger method was studied. It is found that the resistivity, the lifetime of minority charge carriers, and the position of the maximum of the low-temperature luminescence band, which are constant along the growth direction for undoped ingots, vary monotonically along the growth direction for doped ingots. Analysis of the photoluminescence spectra and conductivity in different parts of the doped ingots shows that variations in their electrical properties along the growth direction are due to a redistribution of background acceptors, whose concentration decreases steadily from the beginning of an ingot toward its end. 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It is found that the resistivity, the lifetime of minority charge carriers, and the position of the maximum of the low-temperature luminescence band, which are constant along the growth direction for undoped ingots, vary monotonically along the growth direction for doped ingots. Analysis of the photoluminescence spectra and conductivity in different parts of the doped ingots shows that variations in their electrical properties along the growth direction are due to a redistribution of background acceptors, whose concentration decreases steadily from the beginning of an ingot toward its end. 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Solid State</stitle><date>2008-09-01</date><risdate>2008</risdate><volume>50</volume><issue>9</issue><spage>1736</spage><epage>1739</epage><pages>1736-1739</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The effect of scandium and ytterbium doping on the electrical and luminescence properties of polycrystalline silicon produced by the Stockbarger method was studied. It is found that the resistivity, the lifetime of minority charge carriers, and the position of the maximum of the low-temperature luminescence band, which are constant along the growth direction for undoped ingots, vary monotonically along the growth direction for doped ingots. Analysis of the photoluminescence spectra and conductivity in different parts of the doped ingots shows that variations in their electrical properties along the growth direction are due to a redistribution of background acceptors, whose concentration decreases steadily from the beginning of an ingot toward its end. 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| subjects | 2007 July 9–13 Physics Physics and Astronomy Proceedings of the XIII Feofilov Symposium “Spectroscopy of Crystals Doped by Rare-Earth and Transition-Metal Ions” (Irkutsk Solid State Physics |
| title | Effect of Sc and Yb doping on electrical and luminescence properties of silicon produced by the Stockbarger method |
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