Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures
The electroluminescence efficiency of silicon light-emitting diode structures with several layers of β-FeSi 2 nanocrystallites embedded in the p-n junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the st...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015-04, Vol.49 (4), p.508-512 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Shamirzaev, T. S. Galkin, N. G. Chusovitin, E. A. Goroshko, D. L. Shevlyagin, A. V. Gutakovski, A. K. Saranin, A. A. Latyshev, A. V. |
| description | The electroluminescence efficiency of silicon light-emitting diode structures with several layers of β-FeSi
2
nanocrystallites embedded in the
p-n
junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied. |
| doi_str_mv | 10.1134/S1063782615040211 |
| format | Article |
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2
nanocrystallites embedded in the
p-n
junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782615040211</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Physics of Semiconductor Devices</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2015-04, Vol.49 (4), p.508-512</ispartof><rights>Pleiades Publishing, Ltd. 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c240t-c14d063044e4d8979ec1a4d7a6bb69294326d1cb3f38edc98a26d043135032f03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782615040211$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782615040211$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Shamirzaev, T. S.</creatorcontrib><creatorcontrib>Galkin, N. G.</creatorcontrib><creatorcontrib>Chusovitin, E. A.</creatorcontrib><creatorcontrib>Goroshko, D. L.</creatorcontrib><creatorcontrib>Shevlyagin, A. V.</creatorcontrib><creatorcontrib>Gutakovski, A. K.</creatorcontrib><creatorcontrib>Saranin, A. A.</creatorcontrib><creatorcontrib>Latyshev, A. V.</creatorcontrib><title>Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The electroluminescence efficiency of silicon light-emitting diode structures with several layers of β-FeSi
2
nanocrystallites embedded in the
p-n
junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied.</description><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kL1OwzAUhS0EEqXwAGzekVtf23HiEVUtIFUwFCaGKLGd4ipxKtsZeC1mnqHPRKqyITHd3-_o6CB0C3QGwMV8A1TyvGASMiooAzhDE6CKEilydX7sJSfH-yW6inFHKUCRiQl6X7ZWp9C3Q-e8jdr6hGGWkcN3h1u3_UjEdi4l57fYuN7YiOsqWoN7j_d3ZOPmzwt8-CIru3Fs7scFjikMOg3Bxmt00VRttDe_dYreVsvXxSNZvzw8Le7XRDNBE9EgzOiOCmGFKVSurIZKmLySdS0VU4IzaUDXvOGFNVoV1ThTwYFnlLOG8imCk64OfYzBNuU-uK4KnyXQ8phO-SedkWEnJo6_fmtDueuH4Eeb_0A_NWdmTg</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Shamirzaev, T. S.</creator><creator>Galkin, N. G.</creator><creator>Chusovitin, E. A.</creator><creator>Goroshko, D. L.</creator><creator>Shevlyagin, A. V.</creator><creator>Gutakovski, A. K.</creator><creator>Saranin, A. A.</creator><creator>Latyshev, A. V.</creator><general>Pleiades Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150401</creationdate><title>Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures</title><author>Shamirzaev, T. S. ; Galkin, N. G. ; Chusovitin, E. A. ; Goroshko, D. L. ; Shevlyagin, A. V. ; Gutakovski, A. K. ; Saranin, A. A. ; Latyshev, A. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c240t-c14d063044e4d8979ec1a4d7a6bb69294326d1cb3f38edc98a26d043135032f03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductor Devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shamirzaev, T. S.</creatorcontrib><creatorcontrib>Galkin, N. G.</creatorcontrib><creatorcontrib>Chusovitin, E. A.</creatorcontrib><creatorcontrib>Goroshko, D. L.</creatorcontrib><creatorcontrib>Shevlyagin, A. V.</creatorcontrib><creatorcontrib>Gutakovski, A. K.</creatorcontrib><creatorcontrib>Saranin, A. A.</creatorcontrib><creatorcontrib>Latyshev, A. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shamirzaev, T. S.</au><au>Galkin, N. G.</au><au>Chusovitin, E. A.</au><au>Goroshko, D. L.</au><au>Shevlyagin, A. V.</au><au>Gutakovski, A. K.</au><au>Saranin, A. A.</au><au>Latyshev, A. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2015-04-01</date><risdate>2015</risdate><volume>49</volume><issue>4</issue><spage>508</spage><epage>512</epage><pages>508-512</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The electroluminescence efficiency of silicon light-emitting diode structures with several layers of β-FeSi
2
nanocrystallites embedded in the
p-n
junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782615040211</doi><tpages>5</tpages></addata></record> |
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| subjects | Magnetic Materials Magnetism Physics Physics and Astronomy Physics of Semiconductor Devices |
| title | Electroluminescent 1.5-μm light-emitting diodes based on p+-Si/NC β-FeSi2/n-Si structures |
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