Structural and optical properties of thin In2O3 films produced by autowave oxidation
Cubic-phase In 2 O 3 films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and e...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013-04, Vol.47 (4), p.569-573 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 47 |
| creator | Tambasov, I. A. Myagkov, V. G. Ivanenko, A. A. Nemtsev, I. V. Bykova, L. E. Bondarenko, G. N. Mihlin, J. L. Maksimov, I. A. Ivanov, V. V. Balashov, S. V. Karpenko, D. S. |
| description | Cubic-phase In
2
O
3
films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In
2
O
3
films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10
−2
Ω cm. |
| doi_str_mv | 10.1134/S1063782613040210 |
| format | Article |
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2
O
3
films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In
2
O
3
films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10
−2
Ω cm.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782613040210</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Fabrication ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Testing of Materials and Structures ; Treatment</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2013-04, Vol.47 (4), p.569-573</ispartof><rights>Pleiades Publishing, Ltd. 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-cb51dbbdfe62c2d54dcbf0c99727ae4ffa4209c4bed939a8f8b1e92f5a9c870f3</citedby><cites>FETCH-LOGICAL-c288t-cb51dbbdfe62c2d54dcbf0c99727ae4ffa4209c4bed939a8f8b1e92f5a9c870f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782613040210$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782613040210$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,778,782,27907,27908,41471,42540,51302</link.rule.ids></links><search><creatorcontrib>Tambasov, I. A.</creatorcontrib><creatorcontrib>Myagkov, V. G.</creatorcontrib><creatorcontrib>Ivanenko, A. A.</creatorcontrib><creatorcontrib>Nemtsev, I. V.</creatorcontrib><creatorcontrib>Bykova, L. E.</creatorcontrib><creatorcontrib>Bondarenko, G. N.</creatorcontrib><creatorcontrib>Mihlin, J. L.</creatorcontrib><creatorcontrib>Maksimov, I. A.</creatorcontrib><creatorcontrib>Ivanov, V. V.</creatorcontrib><creatorcontrib>Balashov, S. V.</creatorcontrib><creatorcontrib>Karpenko, D. S.</creatorcontrib><title>Structural and optical properties of thin In2O3 films produced by autowave oxidation</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Cubic-phase In
2
O
3
films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In
2
O
3
films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10
−2
Ω cm.</description><subject>Fabrication</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Testing of Materials and Structures</subject><subject>Treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEYhYMoWKsP4C4vMJrbzCRLKV4KhS5a10OumtImQ5JR-_bO0O4EV-fA-b-fwwHgHqMHjCl73GDU0JaTBlPEEMHoAswwEqhqWCsuJ9_QasqvwU3OO4Qw5jWbge2mpEGXIck9lMHA2BevR9-n2NtUvM0wOlg-fYDLQNYUOr8_5Ck2g7YGqiOUQ4nf8svC-OONLD6GW3Dl5D7bu7POwfvL83bxVq3Wr8vF06rShPNSaVVjo5RxtiGamJoZrRzSQrSklZY5JxlBQjNljaBCcscVtoK4WgrNW-ToHODTX51izsm6rk_-INOxw6ibZun-zDIy5MTk8TZ82NTt4pDCWPMf6BduWGZX</recordid><startdate>20130401</startdate><enddate>20130401</enddate><creator>Tambasov, I. A.</creator><creator>Myagkov, V. G.</creator><creator>Ivanenko, A. A.</creator><creator>Nemtsev, I. V.</creator><creator>Bykova, L. E.</creator><creator>Bondarenko, G. N.</creator><creator>Mihlin, J. L.</creator><creator>Maksimov, I. A.</creator><creator>Ivanov, V. V.</creator><creator>Balashov, S. V.</creator><creator>Karpenko, D. S.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130401</creationdate><title>Structural and optical properties of thin In2O3 films produced by autowave oxidation</title><author>Tambasov, I. A. ; Myagkov, V. G. ; Ivanenko, A. A. ; Nemtsev, I. V. ; Bykova, L. E. ; Bondarenko, G. N. ; Mihlin, J. L. ; Maksimov, I. A. ; Ivanov, V. V. ; Balashov, S. V. ; Karpenko, D. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-cb51dbbdfe62c2d54dcbf0c99727ae4ffa4209c4bed939a8f8b1e92f5a9c870f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Fabrication</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Testing of Materials and Structures</topic><topic>Treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tambasov, I. A.</creatorcontrib><creatorcontrib>Myagkov, V. G.</creatorcontrib><creatorcontrib>Ivanenko, A. A.</creatorcontrib><creatorcontrib>Nemtsev, I. V.</creatorcontrib><creatorcontrib>Bykova, L. E.</creatorcontrib><creatorcontrib>Bondarenko, G. N.</creatorcontrib><creatorcontrib>Mihlin, J. L.</creatorcontrib><creatorcontrib>Maksimov, I. A.</creatorcontrib><creatorcontrib>Ivanov, V. V.</creatorcontrib><creatorcontrib>Balashov, S. V.</creatorcontrib><creatorcontrib>Karpenko, D. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tambasov, I. A.</au><au>Myagkov, V. G.</au><au>Ivanenko, A. A.</au><au>Nemtsev, I. V.</au><au>Bykova, L. E.</au><au>Bondarenko, G. N.</au><au>Mihlin, J. L.</au><au>Maksimov, I. A.</au><au>Ivanov, V. V.</au><au>Balashov, S. V.</au><au>Karpenko, D. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and optical properties of thin In2O3 films produced by autowave oxidation</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2013-04-01</date><risdate>2013</risdate><volume>47</volume><issue>4</issue><spage>569</spage><epage>573</epage><pages>569-573</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Cubic-phase In
2
O
3
films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In
2
O
3
films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10
−2
Ω cm.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782613040210</doi><tpages>5</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Fabrication Magnetic Materials Magnetism Physics Physics and Astronomy Testing of Materials and Structures Treatment |
| title | Structural and optical properties of thin In2O3 films produced by autowave oxidation |
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