Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals
The temperature dependences of the conductivity σ( T ) and the switching and memory effects in one-dimensional TlInSe 2 and TlInTe 2 single crystals have been studied. A specific feature is found in the dependence σ( T ) above 333 K, which is related to the transition of crystals to the state with s...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-11, Vol.45 (11), p.1387-1390 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 45 |
| creator | Sardarly, R. M. Samedov, O. A. Abdullayev, A. P. Salmanov, F. T. Alekperov, O. Z. Huseynov, E. K. Aliyeva, N. A. |
| description | The temperature dependences of the conductivity σ(
T
) and the switching and memory effects in one-dimensional TlInSe
2
and TlInTe
2
single crystals have been studied. A specific feature is found in the dependence σ(
T
) above 333 K, which is related to the transition of crystals to the state with superionic conductivity. It is suggested that the ion conductivity is caused by the diffusion of Tl
+
ions over vacancies in the thallium sublattice between (In
3+
Te
2
2−
)
−
and (In
3+
Se
2
2−
)
−
nanochains (nanorods).
S
-type switching and memory effects are revealed in TlInSe
2
and TlInTe
2
crystals, as well as voltage oscillations in the range of negative differential resistance. It is suggested that the switching effect and voltage oscillations are related to the transition of crystals to the superionic state, which is accompanied by “melting” of the Tl sublattice. The effect of electric-field-induced transition of TlInSe
2
and TlInTe
2
crystals to the superionic state is found. |
| doi_str_mv | 10.1134/S1063782611110224 |
| format | Article |
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T
) and the switching and memory effects in one-dimensional TlInSe
2
and TlInTe
2
single crystals have been studied. A specific feature is found in the dependence σ(
T
) above 333 K, which is related to the transition of crystals to the state with superionic conductivity. It is suggested that the ion conductivity is caused by the diffusion of Tl
+
ions over vacancies in the thallium sublattice between (In
3+
Te
2
2−
)
−
and (In
3+
Se
2
2−
)
−
nanochains (nanorods).
S
-type switching and memory effects are revealed in TlInSe
2
and TlInTe
2
crystals, as well as voltage oscillations in the range of negative differential resistance. It is suggested that the switching effect and voltage oscillations are related to the transition of crystals to the superionic state, which is accompanied by “melting” of the Tl sublattice. The effect of electric-field-induced transition of TlInSe
2
and TlInTe
2
crystals to the superionic state is found.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782611110224</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Diffusion ; Magnetic Materials ; Magnetism ; Nonelectronic Properties of Semiconductors (Atomic Structure ; Physics ; Physics and Astronomy</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1387-1390</ispartof><rights>Pleiades Publishing, Ltd. 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-a2f024b88f5bcbe4fe5db56b52483c19345eda9868abdf47494beafbe1f50df53</citedby><cites>FETCH-LOGICAL-c288t-a2f024b88f5bcbe4fe5db56b52483c19345eda9868abdf47494beafbe1f50df53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782611110224$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782611110224$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Sardarly, R. M.</creatorcontrib><creatorcontrib>Samedov, O. A.</creatorcontrib><creatorcontrib>Abdullayev, A. P.</creatorcontrib><creatorcontrib>Salmanov, F. T.</creatorcontrib><creatorcontrib>Alekperov, O. Z.</creatorcontrib><creatorcontrib>Huseynov, E. K.</creatorcontrib><creatorcontrib>Aliyeva, N. A.</creatorcontrib><title>Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The temperature dependences of the conductivity σ(
T
) and the switching and memory effects in one-dimensional TlInSe
2
and TlInTe
2
single crystals have been studied. A specific feature is found in the dependence σ(
T
) above 333 K, which is related to the transition of crystals to the state with superionic conductivity. It is suggested that the ion conductivity is caused by the diffusion of Tl
+
ions over vacancies in the thallium sublattice between (In
3+
Te
2
2−
)
−
and (In
3+
Se
2
2−
)
−
nanochains (nanorods).
S
-type switching and memory effects are revealed in TlInSe
2
and TlInTe
2
crystals, as well as voltage oscillations in the range of negative differential resistance. It is suggested that the switching effect and voltage oscillations are related to the transition of crystals to the superionic state, which is accompanied by “melting” of the Tl sublattice. The effect of electric-field-induced transition of TlInSe
2
and TlInTe
2
crystals to the superionic state is found.</description><subject>Diffusion</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Nonelectronic Properties of Semiconductors (Atomic Structure</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9UMtOwzAQtBBIlMIHcPMPBGzHTp0jqnhUqsQhQeIW2c66ddU6lZ2A8vc4LTck9jKz2pnRahC6p-SB0pw_VpQU-UKygqYhjPELNKOkJFnBF-XlxIs8m-7X6CbGHSGUSsFn6LMajhBc553BpvPtYHr35foRK9_i-O16s3V-g8FaMD1O-xYf4NCFETuP6_3KV8BO2onXiZswxl7t4y26sgng7hfn6OPluV6-Zev319XyaZ0ZJmWfKWYJ41pKK7TRwC2IVotCC8ZlbmiZcwGtKmUhlW4tX_CSa1BWA7WCtFbkc0TPuSZ0MQawzTG4gwpjQ0kzVdP8qSZ52NkTk9ZvIDS7bgg-vfmP6QfmjWco</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>Sardarly, R. M.</creator><creator>Samedov, O. A.</creator><creator>Abdullayev, A. P.</creator><creator>Salmanov, F. T.</creator><creator>Alekperov, O. Z.</creator><creator>Huseynov, E. K.</creator><creator>Aliyeva, N. A.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20111101</creationdate><title>Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals</title><author>Sardarly, R. M. ; Samedov, O. A. ; Abdullayev, A. P. ; Salmanov, F. T. ; Alekperov, O. Z. ; Huseynov, E. K. ; Aliyeva, N. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-a2f024b88f5bcbe4fe5db56b52483c19345eda9868abdf47494beafbe1f50df53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Diffusion</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Nonelectronic Properties of Semiconductors (Atomic Structure</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sardarly, R. M.</creatorcontrib><creatorcontrib>Samedov, O. A.</creatorcontrib><creatorcontrib>Abdullayev, A. P.</creatorcontrib><creatorcontrib>Salmanov, F. T.</creatorcontrib><creatorcontrib>Alekperov, O. Z.</creatorcontrib><creatorcontrib>Huseynov, E. K.</creatorcontrib><creatorcontrib>Aliyeva, N. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sardarly, R. M.</au><au>Samedov, O. A.</au><au>Abdullayev, A. P.</au><au>Salmanov, F. T.</au><au>Alekperov, O. Z.</au><au>Huseynov, E. K.</au><au>Aliyeva, N. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2011-11-01</date><risdate>2011</risdate><volume>45</volume><issue>11</issue><spage>1387</spage><epage>1390</epage><pages>1387-1390</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The temperature dependences of the conductivity σ(
T
) and the switching and memory effects in one-dimensional TlInSe
2
and TlInTe
2
single crystals have been studied. A specific feature is found in the dependence σ(
T
) above 333 K, which is related to the transition of crystals to the state with superionic conductivity. It is suggested that the ion conductivity is caused by the diffusion of Tl
+
ions over vacancies in the thallium sublattice between (In
3+
Te
2
2−
)
−
and (In
3+
Se
2
2−
)
−
nanochains (nanorods).
S
-type switching and memory effects are revealed in TlInSe
2
and TlInTe
2
crystals, as well as voltage oscillations in the range of negative differential resistance. It is suggested that the switching effect and voltage oscillations are related to the transition of crystals to the superionic state, which is accompanied by “melting” of the Tl sublattice. The effect of electric-field-induced transition of TlInSe
2
and TlInTe
2
crystals to the superionic state is found.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782611110224</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1387-1390 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S1063782611110224 |
| source | SpringerNature Journals |
| subjects | Diffusion Magnetic Materials Magnetism Nonelectronic Properties of Semiconductors (Atomic Structure Physics Physics and Astronomy |
| title | Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals |
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