The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb
Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In 0.5 Ga 0.5 Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all dope...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-09, Vol.44 (9), p.1149-1152 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Zeynalov, C. A. Aliev, F. F. Damirova, S. Z. Tairov, B. A. |
| description | Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In
0.5
Ga
0.5
Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at
T
< 200 K, the charge carriers are scattered by impurity ions and, at
T
> 200 K, scattering by lattice vibrations also introduces a substantial contribution. |
| doi_str_mv | 10.1134/S1063782610090071 |
| format | Article |
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0.5
Ga
0.5
Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at
T
< 200 K, the charge carriers are scattered by impurity ions and, at
T
> 200 K, scattering by lattice vibrations also introduces a substantial contribution.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782610090071</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Electrical and Optical Properties of Semiconductors ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2010-09, Vol.44 (9), p.1149-1152</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c240t-9c5ea2bbbae4cd51c0a89c4e3c6e5bc73fdf257158487a0dea71fe27f55ea2423</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782610090071$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782610090071$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,41493,42562,51324</link.rule.ids></links><search><creatorcontrib>Zeynalov, C. A.</creatorcontrib><creatorcontrib>Aliev, F. F.</creatorcontrib><creatorcontrib>Damirova, S. Z.</creatorcontrib><creatorcontrib>Tairov, B. A.</creatorcontrib><title>The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In
0.5
Ga
0.5
Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at
T
< 200 K, the charge carriers are scattered by impurity ions and, at
T
> 200 K, scattering by lattice vibrations also introduces a substantial contribution.</description><subject>Electrical and Optical Properties of Semiconductors</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kM9KAzEQh4MoWKsP4C0vkJrJJpvdoxT_FAoeWhG8LLPZSbulzS5JVXx7d6k3wcvMB8M3zPwYuwU5A8j03QpkntlC5SBlKaWFMzaBgUSubXk-cp6JcX7JrlLaSQlQGD1hb-st8U-MLQZHfI9fHEPDk8PjkWIbNvxAbouhTQfeeT5g3BB3GGNLMfE28Pcgmq6nhvdiEeTMPOFQVvU1u_C4T3Tz26fs9fFhPX8Wy5enxfx-KZzS8ihKZwhVXddI2jUGnMSidJoyl5Opnc1845WxYApdWJQNoQVPynozelplUwanvS52KUXyVR_bA8bvCmQ1JlP9SWZw1MlJ_fgixWrXfcQwnPmP9AO7YWTj</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Zeynalov, C. A.</creator><creator>Aliev, F. F.</creator><creator>Damirova, S. Z.</creator><creator>Tairov, B. A.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100901</creationdate><title>The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb</title><author>Zeynalov, C. A. ; Aliev, F. F. ; Damirova, S. Z. ; Tairov, B. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c240t-9c5ea2bbbae4cd51c0a89c4e3c6e5bc73fdf257158487a0dea71fe27f55ea2423</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Electrical and Optical Properties of Semiconductors</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zeynalov, C. A.</creatorcontrib><creatorcontrib>Aliev, F. F.</creatorcontrib><creatorcontrib>Damirova, S. Z.</creatorcontrib><creatorcontrib>Tairov, B. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zeynalov, C. A.</au><au>Aliev, F. F.</au><au>Damirova, S. Z.</au><au>Tairov, B. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2010-09-01</date><risdate>2010</risdate><volume>44</volume><issue>9</issue><spage>1149</spage><epage>1152</epage><pages>1149-1152</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In
0.5
Ga
0.5
Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at
T
< 200 K, the charge carriers are scattered by impurity ions and, at
T
> 200 K, scattering by lattice vibrations also introduces a substantial contribution.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782610090071</doi><tpages>4</tpages></addata></record> |
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| source | SpringerNature Journals |
| subjects | Electrical and Optical Properties of Semiconductors Magnetic Materials Magnetism Physics Physics and Astronomy |
| title | The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb |
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