The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb

Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In 0.5 Ga 0.5 Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all dope...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2010-09, Vol.44 (9), p.1149-1152
Hauptverfasser:	Zeynalov, C. A., Aliev, F. F., Damirova, S. Z., Tairov, B. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical and Optical Properties of Semiconductors Magnetic Materials Magnetism Physics Physics and Astronomy
Online-Zugang:	Volltext
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Zusammenfassung:	Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In 0.5 Ga 0.5 Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at T < 200 K, the charge carriers are scattered by impurity ions and, at T > 200 K, scattering by lattice vibrations also introduces a substantial contribution.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782610090071