Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs
Evidence given by electron microscopy of dislocation relaxation of stresses near InAs quantum dots buried into GaAs is presented. It was found that dislocation defects not emerging to the film surface are formed in some buried quantum dots. This suggests that stress relaxation occurs in the buried s...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2009-10, Vol.43 (10), p.1387-1393 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 43 |
| creator | Bert, N. A. Kolesnikova, A. L. Nevedomsky, V. N. Preobrazhenskii, V. V. Putyato, M. A. Romanov, A. E. Seleznev, V. M. Semyagin, B. R. Chaldyshev, V. V. |
| description | Evidence given by electron microscopy of dislocation relaxation of stresses near InAs quantum dots buried into GaAs is presented. It was found that dislocation defects not emerging to the film surface are formed in some buried quantum dots. This suggests that stress relaxation occurs in the buried state of the quantum dot, rather than at the stage of the formation and growth of an InAs island on the GaAs surface. Models of internal dislocation relaxation of buried quantum dots are presented. |
| doi_str_mv | 10.1134/S1063782609100236 |
| format | Article |
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| subjects | Fabrication Magnetic Materials Magnetism Physics Physics and Astronomy Testing of Materials and Structures Treatment |
| title | Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs |
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