I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x

The I–V characteristics of the p -Si- n -(Si 2 ) 1 − x (CdS) x (0 ≤ x ≤ 0.01) structures are investigated at various temperatures. It is found that the I–V characteristic of such structures has a sublinear portion of the current growth with voltage V ≈ V 0 exp( JaW ). The experimental results can be...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2009-04, Vol.43 (4), p.416-418
Hauptverfasser:	Saidov, A. S., Leyderman, A. Yu, Usmonov, Sh. N., Kholikov, K. T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronic and Optical Properties of Semiconductors Magnetic Materials Magnetism Physics Physics and Astronomy
Online-Zugang:	Volltext
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