I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x
The I–V characteristics of the p -Si- n -(Si 2 ) 1 − x (CdS) x (0 ≤ x ≤ 0.01) structures are investigated at various temperatures. It is found that the I–V characteristic of such structures has a sublinear portion of the current growth with voltage V ≈ V 0 exp( JaW ). The experimental results can be...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2009-04, Vol.43 (4), p.416-418 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 43 |
| creator | Saidov, A. S. Leyderman, A. Yu Usmonov, Sh. N. Kholikov, K. T. |
| description | The
I–V
characteristics of the
p
-Si-
n
-(Si
2
)
1 −
x
(CdS)
x
(0 ≤
x
≤ 0.01) structures are investigated at various temperatures. It is found that the
I–V
characteristic of such structures has a sublinear portion of the current growth with voltage
V
≈
V
0
exp(
JaW
). The experimental results can be explained on the basis of the theory of the injection depletion effect. It is shown that the mobility of the minority carrier (hole) decreases with an increasing temperature. |
| doi_str_mv | 10.1134/S1063782609040022 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_sprin</sourceid><recordid>TN_cdi_crossref_primary_10_1134_S1063782609040022</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1134_S1063782609040022</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2032-2038dbf5a38bcf14ff88ef2121b22fcf320dbc11802a1bad06d5203bcfdffcc23</originalsourceid><addsrcrecordid>eNp9kL1OAzEQhC0EEiHwAHQuk-LAu767XEoU8RMpEkWA9vD5BxwFO7LvpNBRUsMb5knwKXRINLMj7Xyr1RByDuwCgOeXS2Aln1RYsinLGUM8IANIPivzyfSw9yXP-v0xOYlxxRhAVeQD8jzffXw_UfkqgpCtDja2VlJv6CZzNLahk20XdKSNiFpR76ig0rvWus53kUa_tqrXrrXeRTpaWhwD3X1-0e12NFPL8faUHBmxjvrsdw7J4831w-wuW9zfzmdXi0wi45glqVRjCsGrRhrIjakqbRAQGkQjDUemGpmeZiigEYqVqkhMyipjpEQ-JLC_K4OPMWhTb4J9E-G9Blb3FdV_KkoM7pmYsu5Fh3rlu-DSm_9AP_3Wajg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x</title><source>SpringerLink Journals - AutoHoldings</source><creator>Saidov, A. S. ; Leyderman, A. Yu ; Usmonov, Sh. N. ; Kholikov, K. T.</creator><creatorcontrib>Saidov, A. S. ; Leyderman, A. Yu ; Usmonov, Sh. N. ; Kholikov, K. T.</creatorcontrib><description>The
I–V
characteristics of the
p
-Si-
n
-(Si
2
)
1 −
x
(CdS)
x
(0 ≤
x
≤ 0.01) structures are investigated at various temperatures. It is found that the
I–V
characteristic of such structures has a sublinear portion of the current growth with voltage
V
≈
V
0
exp(
JaW
). The experimental results can be explained on the basis of the theory of the injection depletion effect. It is shown that the mobility of the minority carrier (hole) decreases with an increasing temperature.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782609040022</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Electronic and Optical Properties of Semiconductors ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2009-04, Vol.43 (4), p.416-418</ispartof><rights>Pleiades Publishing, Ltd. 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2032-2038dbf5a38bcf14ff88ef2121b22fcf320dbc11802a1bad06d5203bcfdffcc23</citedby><cites>FETCH-LOGICAL-c2032-2038dbf5a38bcf14ff88ef2121b22fcf320dbc11802a1bad06d5203bcfdffcc23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782609040022$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782609040022$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Saidov, A. S.</creatorcontrib><creatorcontrib>Leyderman, A. Yu</creatorcontrib><creatorcontrib>Usmonov, Sh. N.</creatorcontrib><creatorcontrib>Kholikov, K. T.</creatorcontrib><title>I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The
I–V
characteristics of the
p
-Si-
n
-(Si
2
)
1 −
x
(CdS)
x
(0 ≤
x
≤ 0.01) structures are investigated at various temperatures. It is found that the
I–V
characteristic of such structures has a sublinear portion of the current growth with voltage
V
≈
V
0
exp(
JaW
). The experimental results can be explained on the basis of the theory of the injection depletion effect. It is shown that the mobility of the minority carrier (hole) decreases with an increasing temperature.</description><subject>Electronic and Optical Properties of Semiconductors</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kL1OAzEQhC0EEiHwAHQuk-LAu767XEoU8RMpEkWA9vD5BxwFO7LvpNBRUsMb5knwKXRINLMj7Xyr1RByDuwCgOeXS2Aln1RYsinLGUM8IANIPivzyfSw9yXP-v0xOYlxxRhAVeQD8jzffXw_UfkqgpCtDja2VlJv6CZzNLahk20XdKSNiFpR76ig0rvWus53kUa_tqrXrrXeRTpaWhwD3X1-0e12NFPL8faUHBmxjvrsdw7J4831w-wuW9zfzmdXi0wi45glqVRjCsGrRhrIjakqbRAQGkQjDUemGpmeZiigEYqVqkhMyipjpEQ-JLC_K4OPMWhTb4J9E-G9Blb3FdV_KkoM7pmYsu5Fh3rlu-DSm_9AP_3Wajg</recordid><startdate>200904</startdate><enddate>200904</enddate><creator>Saidov, A. S.</creator><creator>Leyderman, A. Yu</creator><creator>Usmonov, Sh. N.</creator><creator>Kholikov, K. T.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200904</creationdate><title>I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x</title><author>Saidov, A. S. ; Leyderman, A. Yu ; Usmonov, Sh. N. ; Kholikov, K. T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2032-2038dbf5a38bcf14ff88ef2121b22fcf320dbc11802a1bad06d5203bcfdffcc23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Electronic and Optical Properties of Semiconductors</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saidov, A. S.</creatorcontrib><creatorcontrib>Leyderman, A. Yu</creatorcontrib><creatorcontrib>Usmonov, Sh. N.</creatorcontrib><creatorcontrib>Kholikov, K. T.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saidov, A. S.</au><au>Leyderman, A. Yu</au><au>Usmonov, Sh. N.</au><au>Kholikov, K. T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2009-04</date><risdate>2009</risdate><volume>43</volume><issue>4</issue><spage>416</spage><epage>418</epage><pages>416-418</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The
I–V
characteristics of the
p
-Si-
n
-(Si
2
)
1 −
x
(CdS)
x
(0 ≤
x
≤ 0.01) structures are investigated at various temperatures. It is found that the
I–V
characteristic of such structures has a sublinear portion of the current growth with voltage
V
≈
V
0
exp(
JaW
). The experimental results can be explained on the basis of the theory of the injection depletion effect. It is shown that the mobility of the minority carrier (hole) decreases with an increasing temperature.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782609040022</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2009-04, Vol.43 (4), p.416-418 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S1063782609040022 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Electronic and Optical Properties of Semiconductors Magnetic Materials Magnetism Physics Physics and Astronomy |
| title | I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T12%3A51%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_sprin&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=I%E2%80%93V%20characteristic%20of%20p-n%20structures%20based%20on%20a%20continuous%20solid%20solutions%20(Si2)1%20%E2%88%92%20xx(CdS)x&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Saidov,%20A.%20S.&rft.date=2009-04&rft.volume=43&rft.issue=4&rft.spage=416&rft.epage=418&rft.pages=416-418&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782609040022&rft_dat=%3Ccrossref_sprin%3E10_1134_S1063782609040022%3C/crossref_sprin%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |