Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals

The physical model of the formation of grown-in microdefects in dislocation-free Si single crystals has been analyzed. The mathematical models used to describe the processes of defect formation in crystals during their growth are proven to be adequate to the physical model. A technique is proposed t...

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Veröffentlicht in:	Crystallography reports 2012-12, Vol.57 (7), p.898-902
Hauptverfasser:	Talanin, V. I., Talanin, I. E., Ustimenko, N. Ph
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallography and Scattering Methods Physics Physics and Astronomy Real Structure of Crystals
Online-Zugang:	Volltext
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