Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation

Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation

A Monte Carlo simulation is run to study the electron transport in a thin undoped GaAs quantum wire under the influence of a transverse applied electric field. Phonon and surface-roughness scattering are included. Electron drift velocity is investigated as a function of roughness amplitude at a temp...

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Veröffentlicht in:Russian microelectronics 2010-11, Vol.39 (6), p.411-417
Hauptverfasser: Borzdov, A. V., Pozdnyakov, D. V., Borzdov, V. M., Orlikovsky, A. A., V’yurkov, V. V.
Format: Artikel
Sprache:eng
Schlagworte:
Device and Circuit Modeling and Simulation
Electrical Engineering
Engineering
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Zusammenfassung:A Monte Carlo simulation is run to study the electron transport in a thin undoped GaAs quantum wire under the influence of a transverse applied electric field. Phonon and surface-roughness scattering are included. Electron drift velocity is investigated as a function of roughness amplitude at a temperature of 77 or 300 K and a longitudinal electric field of 10 4 or 10 5 V/m. A transverse applied field is shown to provide a means of controlling drift velocity, affecting the scattering rate.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739710060065