Versatile instrument for MOSFET characterization

An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I – V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state densi...

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Veröffentlicht in:	Russian microelectronics 2008-07, Vol.37 (4), p.277-282
Hauptverfasser:	Klekachev, A. V., Kuznetsov, S. N., Pikulev, V. B., Gurtov, V. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits and Systems Electrical Engineering Engineering
Online-Zugang:	Volltext
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