Versatile instrument for MOSFET characterization
An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I – V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state densi...
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| Veröffentlicht in: | Russian microelectronics 2008-07, Vol.37 (4), p.277-282 |
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| container_title | Russian microelectronics |
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| creator | Klekachev, A. V. Kuznetsov, S. N. Pikulev, V. B. Gurtov, V. A. |
| description | An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static
I
–
V
characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state density. Employing a USB-compatible microcontroller, the instrument has a reasonable size (100 × 80 × 50 mm
3
), mass (300 g), and power consumption (at most 2.5 W). The instrument is controlled via a USB bus by a personal computer running specially designed software under Microsoft® Windows 2000/XP®. It can measure currents from 1 pA to 10 mA with the gate or drain voltage varied across the range ±10 V, the MOSFET under test being connected as a two-port. Mean surface-state densities down to 10
9
cm
−2
eV
−1
can be determined. |
| doi_str_mv | 10.1134/S1063739708040082 |
| format | Article |
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I
–
V
characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state density. Employing a USB-compatible microcontroller, the instrument has a reasonable size (100 × 80 × 50 mm
3
), mass (300 g), and power consumption (at most 2.5 W). The instrument is controlled via a USB bus by a personal computer running specially designed software under Microsoft® Windows 2000/XP®. It can measure currents from 1 pA to 10 mA with the gate or drain voltage varied across the range ±10 V, the MOSFET under test being connected as a two-port. Mean surface-state densities down to 10
9
cm
−2
eV
−1
can be determined.</description><identifier>ISSN: 1063-7397</identifier><identifier>EISSN: 1608-3415</identifier><identifier>DOI: 10.1134/S1063739708040082</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Circuits and Systems ; Electrical Engineering ; Engineering</subject><ispartof>Russian microelectronics, 2008-07, Vol.37 (4), p.277-282</ispartof><rights>MAIK Nauka 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1552-369e39a22836cf16938620182fe3cde6af305df8fa54d7a44d6159ce7072fbcb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063739708040082$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063739708040082$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Klekachev, A. V.</creatorcontrib><creatorcontrib>Kuznetsov, S. N.</creatorcontrib><creatorcontrib>Pikulev, V. B.</creatorcontrib><creatorcontrib>Gurtov, V. A.</creatorcontrib><title>Versatile instrument for MOSFET characterization</title><title>Russian microelectronics</title><addtitle>Russ Microelectron</addtitle><description>An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static
I
–
V
characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state density. Employing a USB-compatible microcontroller, the instrument has a reasonable size (100 × 80 × 50 mm
3
), mass (300 g), and power consumption (at most 2.5 W). The instrument is controlled via a USB bus by a personal computer running specially designed software under Microsoft® Windows 2000/XP®. It can measure currents from 1 pA to 10 mA with the gate or drain voltage varied across the range ±10 V, the MOSFET under test being connected as a two-port. Mean surface-state densities down to 10
9
cm
−2
eV
−1
can be determined.</description><subject>Circuits and Systems</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><issn>1063-7397</issn><issn>1608-3415</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9j8tOwzAQRS0EEqXwAezyA4EZj-04S1TxqFTURYFt5Do2pGoTNE4X8PW4KjskVjPSPWc0V4hrhBtEUrcrBEMV1RVYUABWnogJGrAlKdSnec9xecjPxUVKGwAEMGYi4C1wcmO3DUXXp5H3u9CPRRy4eF6uHu5fCv_h2PkxcPedsaG_FGfRbVO4-p1T8Zqx2VO5WD7OZ3eL0qPWsiRTB6qdlJaMj2hqskYCWhkD-TYYFwl0G210WrWVU6o1qGsfKqhkXPs1TQUe73oeUuIQm0_udo6_GoTmULn5Uzk78uikzPbvgZvNsOc-v_mP9AMzVVdR</recordid><startdate>200807</startdate><enddate>200807</enddate><creator>Klekachev, A. V.</creator><creator>Kuznetsov, S. N.</creator><creator>Pikulev, V. B.</creator><creator>Gurtov, V. A.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200807</creationdate><title>Versatile instrument for MOSFET characterization</title><author>Klekachev, A. V. ; Kuznetsov, S. N. ; Pikulev, V. B. ; Gurtov, V. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1552-369e39a22836cf16938620182fe3cde6af305df8fa54d7a44d6159ce7072fbcb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Circuits and Systems</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klekachev, A. V.</creatorcontrib><creatorcontrib>Kuznetsov, S. N.</creatorcontrib><creatorcontrib>Pikulev, V. B.</creatorcontrib><creatorcontrib>Gurtov, V. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Russian microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klekachev, A. V.</au><au>Kuznetsov, S. N.</au><au>Pikulev, V. B.</au><au>Gurtov, V. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Versatile instrument for MOSFET characterization</atitle><jtitle>Russian microelectronics</jtitle><stitle>Russ Microelectron</stitle><date>2008-07</date><risdate>2008</risdate><volume>37</volume><issue>4</issue><spage>277</spage><epage>282</epage><pages>277-282</pages><issn>1063-7397</issn><eissn>1608-3415</eissn><abstract>An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static
I
–
V
characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state density. Employing a USB-compatible microcontroller, the instrument has a reasonable size (100 × 80 × 50 mm
3
), mass (300 g), and power consumption (at most 2.5 W). The instrument is controlled via a USB bus by a personal computer running specially designed software under Microsoft® Windows 2000/XP®. It can measure currents from 1 pA to 10 mA with the gate or drain voltage varied across the range ±10 V, the MOSFET under test being connected as a two-port. Mean surface-state densities down to 10
9
cm
−2
eV
−1
can be determined.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063739708040082</doi><tpages>6</tpages></addata></record> |
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| ispartof | Russian microelectronics, 2008-07, Vol.37 (4), p.277-282 |
| issn | 1063-7397 1608-3415 |
| language | eng |
| recordid | cdi_crossref_primary_10_1134_S1063739708040082 |
| source | SpringerLink Journals |
| subjects | Circuits and Systems Electrical Engineering Engineering |
| title | Versatile instrument for MOSFET characterization |
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