Versatile instrument for MOSFET characterization

An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I – V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state densi...

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Veröffentlicht in:Russian microelectronics 2008-07, Vol.37 (4), p.277-282
Hauptverfasser: Klekachev, A. V., Kuznetsov, S. N., Pikulev, V. B., Gurtov, V. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I – V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state density. Employing a USB-compatible microcontroller, the instrument has a reasonable size (100 × 80 × 50 mm 3 ), mass (300 g), and power consumption (at most 2.5 W). The instrument is controlled via a USB bus by a personal computer running specially designed software under Microsoft® Windows 2000/XP®. It can measure currents from 1 pA to 10 mA with the gate or drain voltage varied across the range ±10 V, the MOSFET under test being connected as a two-port. Mean surface-state densities down to 10 9 cm −2 eV −1 can be determined.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739708040082