Versatile instrument for MOSFET characterization
An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I – V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state densi...
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Veröffentlicht in: | Russian microelectronics 2008-07, Vol.37 (4), p.277-282 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static
I
–
V
characteristics. The former capability enables one to investigate the quality of semiconductor-insulator interfaces and to determine mean surface-state density. Employing a USB-compatible microcontroller, the instrument has a reasonable size (100 × 80 × 50 mm
3
), mass (300 g), and power consumption (at most 2.5 W). The instrument is controlled via a USB bus by a personal computer running specially designed software under Microsoft® Windows 2000/XP®. It can measure currents from 1 pA to 10 mA with the gate or drain voltage varied across the range ±10 V, the MOSFET under test being connected as a two-port. Mean surface-state densities down to 10
9
cm
−2
eV
−1
can be determined. |
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ISSN: | 1063-7397 1608-3415 |
DOI: | 10.1134/S1063739708040082 |