Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices

The results obtained when AlGaN/GaN heterostructure surfaces with undoped i -AlGaN and i -GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are an...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2015-07, Vol.9 (4), p.684-693
Hauptverfasser:	Enisherlova, K. L., Kulikauskas, V. S., Seidman, L. A., Pishchagin, V. V., Konovalov, A. M., Korneev, V. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Surfaces and Interfaces Thin Films
Online-Zugang:	Volltext
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