Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires

The photoluminescence (PL) spectra of semiconductor structures, namely, Al 0.3 Ga 0.7 As-based quasi-one-dimensional cylindrical nanowires (nanowhiskers), are measured. The diameter of a typical nanowire is 20–50 nm, and its length was 0.5–1.0 μm. Samples containing one or several GaAs-based quantum...

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Veröffentlicht in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2013-07, Vol.7 (4), p.622-625
Hauptverfasser: Platonov, A. V., Kochereshko, V. P., Kats, V. N., Tsyrlin, G. E., Buravlev, A. D., Samsonenko, Yu. B., Besombes, L., Mariette, H.
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Sprache:eng
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Zusammenfassung:The photoluminescence (PL) spectra of semiconductor structures, namely, Al 0.3 Ga 0.7 As-based quasi-one-dimensional cylindrical nanowires (nanowhiskers), are measured. The diameter of a typical nanowire is 20–50 nm, and its length was 0.5–1.0 μm. Samples containing one or several GaAs-based quantum dots at the center of the quantum wire are studied. The dot thickness is 2 nm, and the dot diameter is 15–40 nm. Individual nanowhiskers, several nanowhiskers (3–4), and ensembles consisting of many nanowhiskers are studied. The PL spectra are measured for different optical-excitation intensities and in magnetic fields of up to 11 T.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451013040149