Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires
The photoluminescence (PL) spectra of semiconductor structures, namely, Al 0.3 Ga 0.7 As-based quasi-one-dimensional cylindrical nanowires (nanowhiskers), are measured. The diameter of a typical nanowire is 20–50 nm, and its length was 0.5–1.0 μm. Samples containing one or several GaAs-based quantum...
Gespeichert in:
Veröffentlicht in: | Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2013-07, Vol.7 (4), p.622-625 |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The photoluminescence (PL) spectra of semiconductor structures, namely, Al
0.3
Ga
0.7
As-based quasi-one-dimensional cylindrical nanowires (nanowhiskers), are measured. The diameter of a typical nanowire is 20–50 nm, and its length was 0.5–1.0 μm. Samples containing one or several GaAs-based quantum dots at the center of the quantum wire are studied. The dot thickness is 2 nm, and the dot diameter is 15–40 nm. Individual nanowhiskers, several nanowhiskers (3–4), and ensembles consisting of many nanowhiskers are studied. The PL spectra are measured for different optical-excitation intensities and in magnetic fields of up to 11 T. |
---|---|
ISSN: | 1027-4510 1819-7094 |
DOI: | 10.1134/S1027451013040149 |