Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy
A self-organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn deltadoping of the GaAs buffer layer before QD growth with a layer concentration of 10 14 cm −2 leads to the fo...
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| Veröffentlicht in: | Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2012-05, Vol.6 (3), p.511-514 |
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| container_title | Surface investigation, x-ray, synchrotron and neutron techniques |
| container_volume | 6 |
| creator | Dorokhin, M. V. Zdoroveishev, A. V. Malysheva, E. I. Danilov, Yu. A. Zvonkov, B. N. Sholina, A. E. |
| description | A self-organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn deltadoping of the GaAs buffer layer before QD growth with a layer concentration of 10
14
cm
−2
leads to the formation of an array of large QDs with variable composition In
x
Ga
1 −
x
As. The effect is explained within a model of In and Ga atom interdiffusion. |
| doi_str_mv | 10.1134/S1027451012060079 |
| format | Article |
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14
cm
−2
leads to the formation of an array of large QDs with variable composition In
x
Ga
1 −
x
As. The effect is explained within a model of In and Ga atom interdiffusion.</description><identifier>ISSN: 1027-4510</identifier><identifier>EISSN: 1819-7094</identifier><identifier>DOI: 10.1134/S1027451012060079</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Chemistry and Materials Science ; Materials Science ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Surface investigation, x-ray, synchrotron and neutron techniques, 2012-05, Vol.6 (3), p.511-514</ispartof><rights>Pleiades Publishing, Ltd. 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-9dcea63cac46a71b9591c8c3311aa2111fede13aaa646005bf367ee002400203</citedby><cites>FETCH-LOGICAL-c288t-9dcea63cac46a71b9591c8c3311aa2111fede13aaa646005bf367ee002400203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1027451012060079$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1027451012060079$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Dorokhin, M. V.</creatorcontrib><creatorcontrib>Zdoroveishev, A. V.</creatorcontrib><creatorcontrib>Malysheva, E. I.</creatorcontrib><creatorcontrib>Danilov, Yu. A.</creatorcontrib><creatorcontrib>Zvonkov, B. N.</creatorcontrib><creatorcontrib>Sholina, A. E.</creatorcontrib><title>Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy</title><title>Surface investigation, x-ray, synchrotron and neutron techniques</title><addtitle>J. Synch. Investig</addtitle><description>A self-organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn deltadoping of the GaAs buffer layer before QD growth with a layer concentration of 10
14
cm
−2
leads to the formation of an array of large QDs with variable composition In
x
Ga
1 −
x
As. The effect is explained within a model of In and Ga atom interdiffusion.</description><subject>Chemistry and Materials Science</subject><subject>Materials Science</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>1027-4510</issn><issn>1819-7094</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9UMtOw0AMXCGQKIUP4LY_EGpn8zxWFS2Viji098jZODQVzYbdDaJ_z1blhsTBsjXjGdkjxCPCE6JKZluEOE9SBIwhA8jLKzHBAssohzK5DnOgozN_K-6cOwCkuUqzidgumfxo2UnTSr9n2Rp7JN-Z_gy89rIxAzdy3c_dbEVzJz9H6v14DLh3sj7JLxqMlcOeHEseOk_fp3tx09KH44ffPhW75fNu8RJt3lbrxXwT6bgofFQ2milTmnSSUY51mZaoC60UIlGMiC03jIqIsiS8lNatynJmgDgJBWoq8GKrrXHOclsNtjuSPVUI1TmU6k8oQRNfNC7s9u9sq4MZbR-u_Ef0A7QuYw8</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Dorokhin, M. V.</creator><creator>Zdoroveishev, A. V.</creator><creator>Malysheva, E. I.</creator><creator>Danilov, Yu. A.</creator><creator>Zvonkov, B. N.</creator><creator>Sholina, A. E.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120501</creationdate><title>Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy</title><author>Dorokhin, M. V. ; Zdoroveishev, A. V. ; Malysheva, E. I. ; Danilov, Yu. A. ; Zvonkov, B. N. ; Sholina, A. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-9dcea63cac46a71b9591c8c3311aa2111fede13aaa646005bf367ee002400203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Chemistry and Materials Science</topic><topic>Materials Science</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dorokhin, M. V.</creatorcontrib><creatorcontrib>Zdoroveishev, A. V.</creatorcontrib><creatorcontrib>Malysheva, E. I.</creatorcontrib><creatorcontrib>Danilov, Yu. A.</creatorcontrib><creatorcontrib>Zvonkov, B. N.</creatorcontrib><creatorcontrib>Sholina, A. E.</creatorcontrib><collection>CrossRef</collection><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dorokhin, M. V.</au><au>Zdoroveishev, A. V.</au><au>Malysheva, E. I.</au><au>Danilov, Yu. A.</au><au>Zvonkov, B. N.</au><au>Sholina, A. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy</atitle><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle><stitle>J. Synch. Investig</stitle><date>2012-05-01</date><risdate>2012</risdate><volume>6</volume><issue>3</issue><spage>511</spage><epage>514</epage><pages>511-514</pages><issn>1027-4510</issn><eissn>1819-7094</eissn><abstract>A self-organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn deltadoping of the GaAs buffer layer before QD growth with a layer concentration of 10
14
cm
−2
leads to the formation of an array of large QDs with variable composition In
x
Ga
1 −
x
As. The effect is explained within a model of In and Ga atom interdiffusion.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1027451012060079</doi><tpages>4</tpages></addata></record> |
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| ispartof | Surface investigation, x-ray, synchrotron and neutron techniques, 2012-05, Vol.6 (3), p.511-514 |
| issn | 1027-4510 1819-7094 |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Chemistry and Materials Science Materials Science Surfaces and Interfaces Thin Films |
| title | Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy |
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